2015年1月26日 · The strong charge doping induced by the tunable ion intercalation alters the energetics of various charge-ordered states in 1T-TaS2 and produces a series of phase transitions in thin-flake...

2015年1月26日 · In this Article we explore previously inaccessible parameter space in 1T-TaS2-based iFETs following two pathways: (1) reducing the dimensionality of 1T-TaS2 by thinning it down to a few atomic...

2022年10月31日 · We report on the electrical gating of the charge-density-wave phases and current in h-BN-capped three-terminal 1T-TaS 2 heterostructure devices. It is demonstrated that the application of a gate bias can shift the source–drain current–voltage hysteresis associated with the transition between the nearly commensurate and incommensurate charge ...

2024年8月31日 · Here, the authors show experimental evidence of emergent nematic Ising superconductivity with simultaneous hidden magnetism (extrinsic anomalous Hall effect and Kondo screening) in 6R-TaS2 under...

2022年8月10日 · Abstract: We report on electrical gating of the charge-density-wave phases and current in h-BN capped three-terminal 1T-TaS$_2$ heterostructure devices. It is demonstrated that the application of a gate bias can shift the source-drain current-voltage hysteresis associated with the transition between the nearly commensurate and incommensurate ...

2024年12月18日 · 通过对温度变化、脉冲电压持续时间以及近红外光照对相变影响进行全面分析，揭示了多步电致相变中电流驱动和热效应驱动相变的共同作用机制，即随着电流增加，CDW相变机制从电流驱动逐渐转变为热驱动的过程。 该研究结果为统一解释 1T-TaS₂ 中电驱动电荷密度波相变机制的长期争议提供了新见解，更为基于光热耦合实现红外探测提供了崭新思路。 图1 1T-TaS2纳米片多步相变的阈值驱动行为....

2014年7月13日 · Superconductivity emerges in a textured charge-density-wave state induced by ionic gating. Our method of gate-controlled intercalation of 2D atomic crystals in the bulk limit opens up new possibilities in searching for novel states of matter in the extreme charge-carrier-concentration limit.

可调谐离子嵌入引起的强电荷掺杂会改变1T-TaS 2 中各种电荷有序状态的能级，并在尺寸减小的薄片状样品中产生一系列相变。 我们发现1T-TaS 2 中的电荷密度波状态 在临界厚度处在二维极限内坍塌。 同时，在低温下，离子门控会在1T-TaS 2 薄片中引起从Mott绝缘体到金属的多个相变，电阻的调制幅度达到五个数量级，并且超导在离子诱导的带纹理电荷密度波状态下出现门控。 我们的栅极控制插层方法为在极端电荷载流子浓度极限条件下寻找新的物质状态开辟了可能性。

2022年10月31日 · Here we report on the electrical gating of the chargedensity- wave phases and current in h-BN-capped three-terminal 1T-TaS 2 heterostructure devices. It is demonstrated that the application of a gate bias can shift the source–drain current– voltage hysteresis associated with the transition between the nearly commensurate and incommensurate ...

2020年8月24日 · 1 T -TaS 2 undergoes successive phase transitions upon cooling and eventually enters an insulating state of mysterious origin. Some consider this state to be a band insulator with interlayer...