The growth of interfacial SiO 2 and TaSiO x was achieved using ALD, and X-ray photoelectron spectroscopy (XPS) was employed to study the chemical nature, as well as the band …

The XPS investigations revealed uniform Si incorporation throughout the TaSiO x dielectric, and a measurable amount of cross-diffusion between Ge and Ta atomic species in the vicinity of the …

In this work, an in situ SiO2 passivation technique using atomic layer deposition (ALD) during the growth of gate dielectric TaSiOx on solid-source molecular beam epitaxy grown (100)InxGa1 …

X-ray photoelectron spectroscopy (XPS) revealed the incorporation of SiO2 in the composite TaSiOx, and valence band offset − (ΔEV) values for TaSiOx relative to (100) and (110)InxGa1 …

2002年8月1日 · X-ray photoelectron spectroscopy (XPS) measurements of the films yielded a Si (2p) binding energy at 102.1 eV and Ta (4f 7/2) binding energy at 26.2 eV, indicative of Ta …

2020年4月30日 · X-ray photoelectron-spectroscopy (XPS) is a suitable method for obtaining the atomic composition of TiO 2 –SiO 2 films [22], [33] and it can be also used to extract …

X射线光电子能谱（XPS）显示在复合TaSiO x中掺入了SiO 2，并且TaSiO x相对于（100）和（110）In x Ga 1– x As取向的价带偏移（ΔE V）值分别提取2.52±0.05和2.65±0.05eV的α。

The XPS investigations revealed uniform Si incorporation throughout the TaSiOx dielectric, and a measurable amount of cross-diffusion between Ge and Ta atomic species in the vicinity of the …

2018年11月1日 · Cross-sectional transmission electron microscopy revealed sharp heterointerfaces between ALD TaSiO x and (100) and (110)In x Ga 1-x As epilayers, wherein …

X‐ray photoemission spectroscopy (XPS) spectra of the Ta:SiO2 thin films prepared with a) 10 W and b) 20 W DC power on Ta. The Ta 4f XPS spectra were deconvolved into three chemical …