Abstract: Ferroelectric tunnel junction (FTJ) with ultrathin 3 nm-thick Hf 0.5 Zr 0.5 O 2 (HZO) is investigated. The high current density up to 100 A/cm 2 is at least 10 times higher than that in …

2023年5月1日 · A key requirement of an FTJ is to have a sufficiently high tunneling current in the open state to ensure fast and accurate reading while displaying a large tunneling …

2024年1月24日 · Ferroelectric tunnel junctions (FTJs) with ultra-thin ferroelectric films have attracted much attention as two-terminal resistive switching devices due to the...

2022年12月1日 · Ferroelectric tunnel junction (FTJ) device based on epitaxial Hf0.5 Zr 0.5 O 2 (HZO) films was fabricated, allowing excellent electronic synaptic behaviors and high accuracy …

2025年1月1日 · Ferroelectric tunnel junctions (FTJs) based on AlScN ferroelectric material are investigated. A multiscale simulation approach for AlScN FTJs is developed. The results show …

2024年3月27日 · Here, we developed a high-performance flexible field-effect transistor (FeFET) device with a thermal budget of less than 400 °C by integrating Zr-doped HfO2 (HZO) and …

2019年12月31日 · In this paper, we investigate ferroelectric tunneling junctions (FTJs) as the synaptic devices for neuromorphic computing. FTJ is a two-terminal device composed of a thin …

2023年5月4日 · Design parameters from FE layer thickness, polarizations, and coercive field to silicon doping and metal work functions are studied, with their impacts on key FTJ FoMs …

Ferroelectric tunnel junction (FTJ) based crossbar array is a promising candidate for the implementation of low-power and area-efficient neuro-inspired computing. In this paper, we …

具有连续电场可控电阻状态的基于铁电隧道结（FTJ）的忆阻器被认为是未来高密度存储器和先进的神经形态计算架构的有希望的候选者。 然而，刚性单晶衬底的使用以及外延FTJ薄膜的高温 …