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Pixel/DRAM/logic 3-layer stacked CMOS image sensor technology
In this CIS chip, three Si substrates are bonded together, and each substrate is electrically connected by two-stacked through-silica vias (TSVs) through the CIS or dynamic random access memory (DRAM). We obtained low resistance, low leakage current, and high reliability characteristics of these TSVs.
pair_style sw/angle/table command — LAMMPS documentation
The first three Si arguments map LAMMPS atom types 1,2,3 to the Si element in the SW file. The final C argument maps LAMMPS atom type 4 to the C element in the SW file. If a mapping value is specified as NULL, the mapping is not performed.
First Demonstration of Monolithic Three-Dimensional Integration …
Abstract: This work firstly demonstrates a monolithic 3D architecture with ultra-high density IGZO/Si SRAM and IGZO 2T0C DRAM (M3D-SD) integrated in 3-tiers. By incorporating ultra-low leakage IGZO transistor in tier 2 as pass gate and BEOL integration on Si-CMOS cross-coupled inverters (Tier 1), a hybrid IGZO/Si SRAM is demonstrated with ultra ...
Three-dimensional Si/hard-carbon/graphene network as high
2017年11月2日 · The as-prepared three-dimensional Si/HC/G composite is composed of the Si/HC microspheres on the graphene network. In the portion about Si/HC, some of the Si nanoparticles are embedded into the hard carbon, which can provide the great strength alleviating the volume expansion and shrinkage of Si.
The amorphous SiC/Si two and three-color detector with high …
Two and three-color a-SiC:H/a-Si:H heterojunction photodetectors modified from previously published two-color detector to improve rejection ratio at peak responses have been fabricated. Modified two-color detector improves the rejection ratio of blue response at 450 nm from 2.5 to 8 by incorporating a 50 nm a-Si:H layer into the collector.
String-Level Modeling of Two, Three, and Four Terminal Si-Based …
2018年7月26日 · III-V/Si tandem solar cells have demonstrated efficiencies exceeding the theoretical efficiency limit of silicon solar cells. On the cell level, device modeling shows that three-terminal tandem (3T) devices with rear contacted bottom Si cells perform as well as operating the subcells independently (4T).
What are the three SI units related to radioactivity?
2023年12月30日 · The three SI units related to radioactivity are the becquerel (Bq), the gray (Gy), and the sievert (Sv). Explanation: * The becquerel (Bq) is the SI unit of activity, which is the rate of decay of a radioactive substance.
Three-dimensional vertical Si nanowire MOS capacitor model …
Three-dimensional (3D) Si surface nanostructuring is interesting towards increasing the capacitance density of a metal-oxidesemiconductor (MOS) capacitor, while keeping reduced footprint for miniaturization. Si nanowires (SiNWs) can be used in this respect.
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