
Damage microstructures in Ti3SiC2 under successive Xe-He-H …
2024年10月1日 · High-resolution TEM images (Fig. 2 (a-c)) reveal the presence of defect clusters at the peak damage regions in samples irradiated with Xe ions, Xe+He ions, and Xe+He+H ions. In comparison with the sample irradiated solely with Xe ions, the defect clusters in the Xe+He irradiated sample exhibited a greater number density and size.
Irradiation Damage in Ti3(Si,Al)C2: a TEM Investigation
2013年6月18日 · In this work, Ti 3 (Si,Al)C 2 was irradiated at room temperature with 92 MeV Xe ions to induce irradiation damage. The samples were investigated by transmission electron microscopy (TEM) through front view and cross-section observations, which allowed to follow microstructure changes from 0.02 dpa up to 6.67 dpa.
The Ti3SiC2 max phases as promising materials for high …
2021年7月15日 · In the present study, for the first time, a new method for the synthesis of MAX phases of the composition Ti 3 SiC 2, combining high-temperature sintering and hot pressing, was proposed and implemented, and this made it possible to obtain the purest material with a Ti 3 SiC 2 phase content equal to 99.2%.
HiPIMS induced a facile synthesis of Ti3SiC2 MAX phase coating …
In this study, the Ti 3 SiC 2 MAX phase coatings on Ti-6Al-4 V substrates were successful synthesized through a two-step method involving High Power Impulse Magnetron Sputtering (HiPIMS) deposition followed by vacuum annealing at 850 °C for 90 min.
TEM and strain analysis of Ti3SiC2: (a) typical TEM image of an ...
We recently used molecular dynamics (MDs) on graphite, and TEM observations on Ti 3 SiC 2 after spherical nanoindentation [48], to extend our understanding of bulk ripplocations and their...
Microstructure Evolution of the Interface in SiCf/TiC-Ti3SiC2
2024年10月11日 · The phase transformation and interface cracking of this composite under ion irradiation (single Xe, Xe + He, and Xe + He + H ions) and subsequent annealing were analyzed using transmission electron microscopy (TEM), mainly focusing on the interface regions.
磁控溅射Ti3SiC2薄膜生长机理的多尺度研究,Materialia - X-MOL
通过形成作为Ti3AlC2和Ti3SiC2的前体的Ti2AlC,已经证明并解释了Al的催化作用。 最后,薄膜的第二相和连续性已由x和厚度因子控制。 实际上,对于富含Al的薄膜,获得了MAX相膜的连续性,而对于沉积的最薄TiAlx层,已经合成了最纯的MAX相。
Insights into Strength and Deformation in Ti3SiC2 MAX Phase …
2025年3月6日 · We investigated the microstructures, strength and deformation mechanisms of both irradiated and unirradiated Al-doped Ti3SiC2 using the transmission electron microscopy (TEM), nanoindentation and micropillar compression.
层状陶瓷材料——Ti3SiC2 - 知乎 - 知乎专栏
钛碳化硅Ti3SiC2(Titanium silicon carbide)是一种综合陶瓷材料,既具有耐高温、抗氧化、高强度的性能,同时又具有金属材料的导电、导热、可加工性、塑性等。 该项材料的发展契机大致在20世纪80年代,由于纤维、晶须等增强剂的迅速发展和航空高推重比发动机的要求, 陶瓷基复合材料 成为研究热点。 采用纤维、晶须增强使其韧性得到改善,但因制备成本高和可靠性差,仍难以应用。 针对这一问题研究人员开始探索兼有金属和陶瓷性质的高温材料,最后在Ti-Si-C系 …
Ti3SiC2 增强铜基复合材料的性能优化,Journal of Alloys and …
采用固液混合、机械合金化和放电等离子烧结制备了Cu-Ti3SiC2复合材料。 使用 OM、SEM、XRD、TEM、电导率和力学测试对复合材料的内部结构和性能特征进行了表征。
- 某些结果已被删除