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Characterization of SiCN thin films: Experimental and theoretical ...
2014年10月31日 · Silicon carbon nitride (SiCN) thin films were deposited by plasma-enhanced chemical vapor deposition using hexamethyldisilazane at different nitrogen flow rates. Films …
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Highly conformal carbon-doped SiCN films by plasma-enhanced …
2018年7月1日 · The SiCN film with a thickness of 5.0 nm exhibited excellent prevention of moisture diffusion into the device. Furthermore, the step coverage was improved to equivalent …
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2024年11月1日 · The TN Promise Application opens on August 1 and closes on November 1 each year. The application is accessed through the TSAC Student Portal. To create a Student …
Advances in SiCN-SiCN Bonding with High Accuracy Wafer-to …
Results are presented of recent studies in material exploration for W2W bonding and advanced W2W alignment carried out as a holistic approach to enable a robust ultra-fine pitch …
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SiCN陶瓷：一种新型半导体材料 - 知乎 - 知乎专栏
聚合物转化陶瓷（PDCs）技术，即通过有机高分子聚合物经过高温裂解制备无机陶瓷的技术。常见的陶瓷体系包括SiC、Si3N4、BN、AlN等二元体系，SiCN、SiCO、BCN等三元体系，以 …
SiCN薄膜的制备及其光学参数的研究 - 百度 ... - 百度学术
硅碳氮(SiCN)是一种新型的宽带隙半导体材料,光学特性优良,在光电子器件领域具有非常广阔的应用前景.不同Si,C,N元素含量的SiCN薄膜的带隙在2.86-5.00 eV范围内连续可调,非常有利 …