2020年5月21日 · In the past several years, atmospheric pressure chemical vapor deposition (APCVD) with deposition rates in the range of 0.4–1.0 mm·h −1 has been successfully …

2017年12月1日 · Chemical vapor deposited tungsten has a combination of excellent properties, namely high-purity, high density, the capability of forming preferred orientations and …

2020年10月15日 · The established library of CVD precursors for tungsten and molybdenum oxides has been extended well beyond the originally studied simple inorganic precursors to …

2004年8月16日 · Tungsten (W) thin film as a nucleation layer for a W plug-fill process was deposited using a modified chemical vapor deposition (CVD) called pulsed CVD, and …

1994年4月1日 · The mechanism of tungsten chemical vapor deposition (CVD) using hydrogen reduction of tungsten hexafluoride is reviewed, with emphasis on the relevant fundamental …

This paper highlights two new low resistivity W liner films which replace both TiN and the nucleation layer and that allow for continued low resistance scaling of W fill: a plasma …

In the semiconductor industry CVD tungsten has found a very particular niche because of its properties and its ability to deposit uniformly over patterned substrates. It’s most common …

A selective chemical vapor deposition (CVD) tungsten process is used to fabricate three-dimensional tungsten cantilever beams on a silicon substrate. Two beams form …

2020年10月14日 · Chemical vapor deposition (CVD) and chemical-mechanical planarization (CMP) of tungsten have been the enabling process technologies for semiconductor …

Selectively deposited tungsten can greatly improve metal step coverage in the contacts. At the same time, the etch-stop properties of tungsten allow one to tighten up a number of design …