Question: TYU 4.15 Calculate the position of the Fermi energy level in n-type silicon at T = 300 K with respect to the intrinsic Fermi energy level. The doping concentrations are N = 2 X 107 cm 3 and N. = 3 X 1016 cm .

Figure 4.1 NMOS common- source circuit with time- varying signal source in series with gate dc source TYU 4.2 For the circuit shown in Figure 4.1, V DD = 3.3 V and R D = 8 k Ω. The transistor parameters are V TN = 0.4 V, K n = 0.5 mA / V 2, and λ = 0.02 V − 1. (a) Determine V GSQ and V D SQ for I D Q = 0.15 mA.

TYU 4.2 . Silicon at T-300K is doped with impurityco ncentration of Na-5 X 10^16 cm-3 and Nd -2 x 10^16 cm-3. (a) what rea bthe electron and hole mobilities? (b) Determine the resis tivity and conductivity of the material. Example Calculate the space charge width for a Schottky barrier on a heavily doped semiconductor.

TYU 4.9 The transistor in the source-follower circuit shown in Figure 4.31 is biased with a constant current source. The transistor parameters are: V TN = 2 V, k n ′ = 40 μ A / V 2, and λ = 0.01 V − 1. The load resistor is R L = 4 k Ω. (a) Design the transistor width-to-length ratio such that g m = 2 mA / V when l = 0.8 mA.

Question: (b)TYU 4.4 The parameters for the circuit in Figure 4.8 are VDD=5 V and RD=5kΩ. The transistor parameters are VTP=−0.4 V,Kp=0.4 mA/V2, and λ=0. (a) Determine VSGQ and IDQ such that VSDQ=3 V. (b) Calculate gm and the small-signal voltage gain.

Answer to TYU 4.10 Consider silicon with a phosphorus impurity. Question: TYU 4.10 Consider silicon with a phosphorus impurity concentration of N; = 10 cm Determine the percent of ionized phosphorus atoms at (a) T = 100 K, (b) T = 200 K, (C) T = 300 K, and (d) T = 400 K. [%86 66 (P) :%96 66 (2) 57866 %79 £6 (2) sus]

Question: Generate the following matrices using nested for loops like the one in TYU 4.5-3 Problem 1: Matrix 1=⎣⎡91419131823⎦⎤ Problem 2: Matrix 2=⎣⎡123234345⎦⎤ please answer in MATLAB code!

TEST YOUR UNDERSTANDING TYU 3.3 A simplified E versus k curve for an electron in the conduction band is given. The value of a is 10 Å. Determine the relative effective mass m*/mo. (SLT'I = 01/*W 'SUV) TYU 3.4 A simplified E versus k curve for a hole in the valence band is given. As- sume a value of a = 12 Å.

TYU 4.9 Determine the fraction of total holes still in the acceptor states in silicon at I = 300 K for a boron impurity concentration of N, = 10'7cm? (6L1'0 'suy) Your solution’s ready to go!

Question: 550 K. At this A silicon device with n-type material is to be operated at T TYU 4.13 temperature, the intrinsic carrier concentration must contribute no more than 5 percent of the total electron concentration. Determine the minimum donor sOI X 01 - 2 concentration required to meet this specification.