与传统的硅金属氧化物半导体场效应晶体管 (MOSFET) 相比,氮化镓 (GaN) 和碳化硅 (SiC) FET 可提高功率密度和效率。 尽管 GaN 和 SiC 均具有宽带隙,但它门之间存在根本差异,因此分别适合特定的拓扑和应用。 本文目的是比较两者在开关性能、成本和应用方面的差异,并说明各自提供的技术。 贝尔实验室的两位工程师在 20 世纪 50 年代发明了 MOSFET,在电力电子领域取得了重大突破。 几年后,第一个商用 MOSFET 投入生产。 绝缘栅双极型晶体管 (IGBT) 自 20 世纪 80 年代 …

2024年11月25日 · The evolution of power and radiofrequency electronics enters a new era with (ultra)wide bandgap semiconductors such as GaN, SiC, and β -Ga 2 O 3, driving significant advancements across various technologies. The elevated breakdown voltage and minimal on-resistance result in size-compact and energy-efficient devices.

Instead, the HPA designed using GaN-on-SiC technology, represents the first step towards the realization of a fully integrated GaN transmitter for X-Band space applications. In this case, experimental results shown that the HPA reaches an output power higher than 41 dBm with a gain higher than 17 dBm and a ripple lower than 0.5 dB from 8.6 GHz ...

2022年6月20日 · In this study, the UWB microwave generation system with MHz tunable re-frequency based on 4H-SiC PCSS is demonstrated. It is capable of generating ultrahigh re-frequency pulses from 0.5 to 2.0 MHz.

2023年1月26日 · Ultra-wide band gap semiconductor devices based on β-phase gallium oxide (Ga 2 O 3) offer the potential to achieve higher switching performance and efficiency and lower manufacturing cost than that of today’s wide band gap power electronics.

the designs of two ultra-wideband (UWB) PAs are reported together with experimental results. The first one is based on commercial GaN-on-SiC technology while the other one is developed exploiting a GaN-on-Si technology. Examples of GaN-based Doherty PAs for cellular base-stations are also discussed and state-of-the-art

2011年7月27日 · The mono-crystalline SiC substrate is the most often used material for industrial growing epitaxial structures for GaN transistors. It is used by TriQuint Semicionductor, RFMD, Toshiba, SEDI, Cree and a number of others.

2025年2月11日 · A New Generation GaN/SiC Monolithically Integrated Frequency Sources With Ultrahigh-Power Output Based on Thermal Resistance Calculation Model Abstract: Compared with GaAs Schottky barrier diodes (SBDs), GaN SBDs …

2021年8月25日 · This paper demonstrates a MMIC GaN X-band PA designed to have improved efficiency by second harmonic power injection at the output that helps shape the time-domain waveforms across the drain.

2022年7月6日 · Ultra-wide bandgap (UWB) semiconductor with general bandgap (E g) greater than 4 eV can sustain a higher critical field (E c) and hence a higher blocking voltage is achievable at a...