2007年2月27日 · SANTA CLARA, Calif.– (BUSINESS WIRE)–Applied Materials, Inc. introduces the Applied Endura® Metal Hardmask system with new Versa™ TTN PVD technology that delivers the industry’s most advanced TiN1 hardmask film for patterning copper/low k interconnects and high aspect ratio contact structures.

PVD 薄膜沉积工艺需要一个高真空的平台，在这个平台上，将 PVD 沉积工艺与脱气和表面预处理技术相集成，以获得最佳的界面和薄膜质量。 应用材料公司的 Endura 平台是当前 PVD 金属化的业界黄金标准。 ①Endura® Amber™ PVD. 可靠及完整地用铜填充 互连 沟槽和通孔结构，对于微电子制造的器件可靠性非常重要。 该工艺的必要步骤为沉积阻挡层（防止铜扩散至周围绝缘材料）和铜种子层 [方便随后的 电化学沉积（或电镀）]，使其不会出现孔洞和缝隙。 迄今为止， …

2007年2月27日 · Applied Materials, Inc. introduces the Applied Endura® Metal Hardmask system with new Versa? TTN PVD technology that delivers the industry's most advanced TiN1 hardmask...

AMAT ENDURA2 Chamber (Versa TTN) 1. condition : as-is 2. Location : M-A-Korea 3. Process : WSI 4. Wafer Size : 12

2007年2月27日 · The system contains new Versa titanium/titanium nitride (TTN) physical vapor deposition (PVD) technology that the company believes delivers the industry’s most advanced titanium nitride (TiN) hardmask film.

Revolutionizing physical vapor deposition (PVD) technology for titanium nitride (TiN) thin films, the Endura Cirrus HTX TiN solves hardmask extendibility challenges for next-generation devices. As chip features continue shrinking, innovations in hardmask are crucial for accurately patterning ever more complex, tiny interconnect structures.

Versa XLR2 W PVD 腔通过沉积更纯净和更光滑的钨膜来降低互联电阻，该钨膜比使用当前技术所沉积的钨的电阻率低 10-15%。 新系统借助关键硬件组件的创新实现了这一质量增强，如微波源磁控管、新颖的工艺化学和 等离子 体特征调制。

The Versa XLR2 W PVD chamber reduces interconnect resistance by depositing purer and smoother tungsten film with resistivity 10-15% lower than tungsten deposited using current technology.

Applied Materials Endura II Chamber: Versa TTN PVD (Physical Vapor Deposition) available for Sale by SDI Group. Item id:97549, model Endura II Chamber: Versa TTN manufactured by Applied Materials

2007年4月20日 · The Applied Endura Metal Hardmask system with Versa TTN PVD technology delivers TiN1 hardmask film for patterning copper/low k interconnects and high aspect ratio contact structures. This metal hardmask film enables CD2 and profile control and preserves the k-value of ultralow k dielectric materials for increased chip speed and yield.