55/65nm 半导体制造工艺 后段（2） - 知乎专栏
主要的工艺步骤分为薄膜沉积→ AIO (Trench & Via） 刻蚀→铜电镀→ CMP 第一步是薄膜沉积
VIA-ETCH 后芯片清洗工艺的改进和良率 - 豆丁网
2012年9月6日 · 国内外一些主流的做法是使用非接触式的芯片正面喷雾清洗 来实现铜互联的通孔蚀刻（Via Etch）后清洗或者通过改善通孔蚀刻工艺来减少由于蚀刻所 带来的颗粒缺陷。
A review on the mainstream through-silicon via etching methods
2022年1月1日 · This review aims to provide a comprehensive summary for four kinds of mainstream TSV etching methods, i.e., KOH wet etching, laser drilling, deep reactive ion …
A self-aligned via etch process to increase yield and reliability of …
Back-end-of line (BEOL) interconnect scaling has led to the implementation of self-aligned via (SAV) schemes for ≤ 90 nm BEOL pitches [1]. In one implementation
A single-step etching method using the SF6/C4F8 chemistry is developed in this study as an alternative through-silicon-via (TSV) etching approach of the traditional Bosch process to …
Mechanism of via etch striation and its impact on contact …
The mechanism of two kinds of via etch striation (type I and type II) has been investigated to improve contact resistance (Rc) uniformity and solve breakdown vo
Development of vertical and tapered via etch for 3D through …
Various sizes of vertical vias and trenches with diameters/widths ranging from 1-100 mum with an AR up to 50 are realized using Bosch deep reactive ion etch (DRIE) process. A linear model is …
A Study of Self-Aligned-Via Based All-in-One Etch - IOPscience
2014年2月27日 · In this work, compared to the traditional PTV scheme on sub-45nm test vehicle, we successfully demonstrate that the self-aligned-via (SAV) based all-in-one (AIO) etch …
优化VIA-ETCH后清洗工艺，提升芯片良率 - CSDN文库
VIA-ETCH是一个重要的工艺步骤，涉及到芯片制造中的蚀刻过程，其后的清洗工作需精确且高效。 在芯片清洗过程中，常见的方法包括使用高纯度的去离子水 (DIW)进行冲洗，更多下载资源 …
VIA-ETCH后芯片清洗工艺的改进和良率的提高.doc 全文免费在线 …
2017年9月22日 · 在使用铜互 联的通孔蚀刻（Via Etch）后清洗的工艺中采用了双面刷子清洗设备（图 1） [2]。 通孔蚀刻 （Via Etch）后清洗的主要作用是清洗由于通孔蚀刻、光阻去除后所 …
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