2020年6月26日 · We report the growth of single-layer vanadium diselenide (VSe 2) by molecular-beam epitaxy on superconducting niobium diselenide (NbSe 2) substrate and study the magnetic and electrical...

2018年2月19日 · VSe 2 was grown on graphite (highly oriented pyrolytic graphite (HOPG)) or MoS 2 by molecular beam epitaxy. The mono- to few-layer films were characterized by X-ray and ultraviolet photoemission...

2024年1月31日 · Using scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES), we demonstrate the epitaxial growth of high-quality VSe2 on Au(111) with the octahedral (1T) structure and the Se-vacancy-induced transformation of VSe2 from the metallic moiré (1T) phase to the semiconducting (2H) phase.

2018年4月15日 · Here, we report the growth of monolayer VSe2 by molecular beam epitaxy (MBE) method. Electronic properties measurements by scanning tunneling spectroscopy (STS) method revealed that the as-grown monolayer VSe2 has magnetic characteristic peaks in its electronic density of states and a lower work-function at its edges.

2021年6月18日 · A combined study of scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) is conducted to understand the multiple charge density wave (CDW) phases of monolayer (ML) VSe 2 films manifested by graphene substrates.

2020年3月13日 · In this report, we conduct a systematic study to understand the nature of the √3 × 2 and √3 × √7 CDW in ML VSe2 using scanning tunneling microscopy (STM). Bias dependent topography and differential conductance (dI/dV) mapping indicate that the √3 × 2 and √3 × √7 modulations are mostly driven by strong lattice distortions of the ...

2024年11月28日 · 利用分子束外延技术在2H-NbSe2块体上生长单层VSe2，实现了人工近藤晶格/超导体异质结的构建。 光谱 成像扫描隧道显微镜测量表明，在单层VSe2上出现了一个具有√3 × √3周期性的电荷密度波（CDW）相。 出乎意料的是，在费米能级周围出现了明显的近藤共振，并均匀分布在整个薄膜上，证明了近藤晶格的形成。 密度泛函理论计算表明，在VSe2/NbSe2 中存在磁性间隙V原子，它们在形成CDW相和在VSe2中观察到的Kondo晶格中起关键作用。 从共振 …

1990年5月15日 · Defects in the STM scans of 1T-${\mathrm{VSe}}_{2}$ are very localized and appear to be associated with Se-atom vacancies in the surface layer. The STM patterns and response will be reviewed and analyzed in terms of the band structures and Fermi surfaces of the various compounds.

Polymorphisms allowing multiple structural phases are among the most fascinating properties of transition metal dichalcogenides (TMDs). Herein, the polymorphic 1T′ phase and its lattice dynamics for bilayer VSe2 grown on epitaxial bilayer graphene are investigated via low temperature scanning tunneling micro

Here we report on the high-pressure structural and transport properties of 1T-VSe2 by extending the pressure up to 57.8 GPa, through electrical transport, synchrotron X-ray diffraction (XRD) and...