Wide band gap semiconductor materials such as gallium nitride (GaN) and silicon carbide (SiC) are the ideal choice when looking for next generation of efficient power converter switches. However, each material offers certain advantages over the other.

2021年5月11日 · 在半導體材料領域中，第一類半導體是矽(Si)，第二類是砷化鎵(GaAs)，而目前市場所談的第三類寬能隙半導體就是指碳化矽(SiC) 和氮化鎵(GaN) 。 2021年，可以說是第三類寬能隙半導體嶄露頭角的一年，已成為半導體先進材料的代表。

2018年2月5日 · In this paper, some of the emerging trends in WBG (SiC and GaN) technology for power devices have been discussed. In particular, the focus was put on selected “hot topics”, i.e., channel mobility in SiC MOSFETs, Ohmic contacts to SiC devices, approaches and open issues for normally-off GaN HEMTs.

2023年2月3日 · 氮化鎵(GaN)和碳化矽(SiC)半導體現已量產，並迅速擴張其市佔率。 據市場研究公司Yole稱，到2027年底，GaN和SiC元件將佔功率半導體市場的30%，並進而取代矽MOSFET和IGBT。

2024年12月16日 · 寬能隙 (Wide bandgap；WBG)半導體在電力電子和高頻電路領域掀起了一場風暴，取代了許多以前由矽基 (Si-based)元件主導的應用，例如用於基地台的橫向擴散金屬氧化物半導體 (LDMOS)高功率放大器 (HPA)、高壓直流/直流 (DC/DC)轉換的絕緣閘雙極電晶體 (IGBT)等。 尤其是在電力電子領域，有些特定應用需要以高開關頻率運作的功率密集解決方案，以便盡可能地降低開關損耗，這早已不是什麼秘密了。 從電動車 (EV)中的牽引逆變器、車載充電器 (OBC) …

2024年4月10日 · Generally, GaN FETs max out at around 650-V with power applications around 10 kW while 750-V and 1200-V SiC FETs are not unusual and applications can range from 1 kW up to the megawatts (Figure 1). SiC’s excellent thermal conductivity allows for similar power ratings in significantly smaller packages.

• SiC and GaN on Si based power devices are commercially available • The development of GaN on GaN power devices is ongoing • Ga2O3,Diamond andAlN power devices are just at a primitive stage.

2 天之前 · The 650-V battlefield: multilevel GaN vs. SiC Integrating drives, sense, and protection. When the topic of scaling GaN up to higher voltages came up, Speer jabbed the GaN team. “I see GaN companies trying to promote a 650-V solution with three levels for a traction inverter and I think, that’s because they have no choice,” he said. Speer ...

2023年9月11日 · The debate on where to allocate resources—whether toward GaN, SiC or other WBG materials—is ongoing. SiC is more mature due to greater investment, while GaN offers diverse applications beyond power electronics, including RF and 5G technology. Increasing investment in GaN is crucial to its long-term success and further development.

2025年1月23日 · 宽带隙 (Wide bandgap，WBG)半导体在电力电子和高频电路领域掀起了一场风暴，取代了许多以前由硅基 (Si-based)元件主导的应用，例如用于高压直流/直流 (DC/DC)转换的绝缘闸双极电晶体 (IGBT)等。 尤其是在电力电子领域，有些特定应用需要以高开关频率运作的功率密集解决方案，以便尽可能地降低开关损耗，这早已不是什么秘密了。 从电动车 (EV)中的牵引逆变器、车载充电器 (OBC)和高压DC-DC转换器，到工业/商业应用中的不断电供应系统 (UPS) …