2025年2月27日 · Our defect-facilitated (NH 4) 2 S surface passivation approach has achieved robust enhancements in both the on-state and off-state performance of monolayer WSe 2 p-type field-effect transistors (p-FETs), enhancing channel mobility 3-fold, reaching a subthreshold slope (SSmin) value of 70 mV/dec, on-currents of 110 μA/μm, and Imax / Imin > 10 9, ...

Therefore, we introduce a state-of-the-art demonstration of heterostructure devices employing the p-type WSe 2 semiconductor. The device architectures include field-effect transistors, photodetectors, gas sensors, and photovoltaic solar cells.

2022年11月22日 · The WSe 2 /MoS 2 heterostructure absorbs infrared photons with an energy smaller than the material bandgaps via a low-efficiency TPA process. The significant avalanche effect with a gain of ∼1300 improves the responsivity, resulting in …

2023年2月27日 · This paper provides comprehensive experimental analysis relating to improvements in the two-dimensional (2D) p-type metal–oxide–semiconductor (PMOS) field effect transistors (FETs) by pure van ...

2023年10月1日 · The investigations reveal a distinct two-photon absorption (TPA) signature for the annealed W S e 2 films along with a self-focusing effect. The observations indicate the strengthening of optical limiting behavior exhibited by W …

近日，济南大学前沿交叉科学研究院逄金波、刘宏团队，调研了WSe2的合成、方法、性质和电子应用，并在InfoMat上发表了题为“WSe2 2D p-type semiconductor-based electronic devices for information technology: design, preparation, and applications”的综述论文。

2024年10月25日 · By combining p-type WSe2 and n-type MoS2 elec. double layer transistors (EDLTs), we demonstrate CMOS inverters with the highest voltage gain among 2D materials, with negligible off-state voltage, large total noise margin, low …

2024年5月27日 · Synthesizing monolayer WSe2 directly on SiO2 back-gated substrates and leveraging energy band alignment design, 4-nitrobenzenediazonium tetrafluoroborate (4-NBD) molecular dopant with a concentration of 10 mM was utilized to modulate the Fermi level position of monolayer WSe2 for hole doping.

研究揭示了退火后的材料具有独特的双光子吸收（tpa）特征瓦se2薄膜具有自聚焦效果。 观察结果表明，光限制行为的加强瓦Se2当薄膜退火时间较长时。 结果表明，退火过程瓦Se2薄膜可以控制非线性光学特性，并使它们更适合作为高功率应用的光学限制器。

2025年1月24日 · Te-WSe 2 heterojunction photodetector exhibits a high responsivity of 1.3 A/W and a specific detectivity of 1 × 10 10 Jones under the irradiation of 460 nm light source. This study demonstrates the controllable fabrication of large-scale of …