Extreme ultraviolet lithography (EUVL, also known simply as EUV) is a technology used in the semiconductor industry for manufacturing integrated circuits (ICs). It is a type of photolithography that uses 13.5 nm extreme ultraviolet (EUV) light from a laser-pulsed tin (Sn) plasma to create intricate patterns on semiconductor substrates.

Extreme ultraviolet radiation (EUV or XUV) or high-energy ultraviolet radiation is electromagnetic radiation in the part of the electromagnetic spectrum spanning wavelengths shorter than the hydrogen Lyman-alpha line from 121 nm down to the X-ray band of 10 nm.

2024年11月28日 · EUVL has emerged as a critical technique, taking advantage of shorter wavelengths to achieve nanoscale feature sizes with higher precision and lower defect rates than previous lithography methods.

2023年6月26日 · In the case of EUV (or extreme ultraviolet) lithography, the light used is well beyond the visible light spectrum, with wavelengths only about 13 nanometers wide. This light doesn’t occur naturally on earth, but can be produced by using a high-powered laser that impinges upon droplets of tin to create plasma emitting light at this 13 nm wavelength.

2016年11月17日 · For years, extreme ultraviolet (EUV) lithography has been a promising technology that was supposed to help enable advanced chip scaling. But after years of R&D, EUV is still not in production despite major backing from the industry, vast resources and billions of dollars in funding.

2024年12月26日 · Why EUV Technology Matters. If EUV can be seen as an artist, then she would be one with the smallest brush one could ever imagine. This tool enables chipmakers to produce highly complex designs with enhanced capability to develop more efficient microchips.

2021年10月5日 · Extreme ultraviolet (EUV) lithography is a soft X-ray technology, which has a wavelength of 13.5nm. Today’s EUV scanners enable resolutions down to 22nm half-pitch. In a system, an EUV light source makes use of a high power laser to create a plasma. This, in turn, helps emit a short wavelength light inside a vacuum chamber.

2013年10月1日 · First, EUV is absorbed by glass, meaning that traditional lens technology cannot be used. Instead, the beam has to be focused with mirrors, with each mirror absorbing about 30% of the light. In a typical system there are 10 mirrors, meaning that only a tiny fraction of the original power makes it to the mask.

Extreme ultraviolet (EUV) radiation encompasses the band of wavelengths from roughly 10nm to 100nm, between the X-ray and deep UV (DUV) spectral regions. With numerous pressing applications in the EUV region including lithography, nanoscale imaging, and spectroscopy, much effort has recently been focused on developing compact EUV sources.

EUV lithography – how does it work? The ASLM system exposes more than 170 wafers an hour with an extreme ultraviolet (EUV) beam. Here, exposing means structuring photoactive paint on wafers with an optical mask in around a hundred exposure passes with such precision that structures seven nanometers (nm) wide can be created.