The deposition of Ir/YSZ double-layer thin films on silicon by PLD …
2023年4月1日 · This work focuses on the epitaxial growth process and kinetics of silicon-based Ir/yttria-stabilized zirconia (YSZ) bilayer films prepared by PLD and magnetron sputtering, …
Structure and Chemical Reactivity of Y‐Stabilized ZrO2 Surfaces ...
2024年5月17日 · We present a systematic IR spectroscopic study on Y-stabilized ZrO 2 (YSZ) in the form of both well-defined single-crystals (polarization-resolved IRRAS) and nanoparticles …
Bias-assisted epitaxial Ir/YSZ (1 - ScienceDirect
2022年12月15日 · Iridium (Ir) films were deposited on yttrium stabilized zirconia (YSZ) substrates by bias-assisted RF magnetron sputtering. The orientation of Ir films can be orientally …
Epitaxial growth of high-quality yttria-stabilized zirconia films with ...
2023年3月15日 · High-quality (100)-oriented yttria-stabilized zirconia (YSZ) films with uniform thickness were epitaxially grown on silicon substrates by a two-step process of pulsed laser …
Growth mechanism of epitaxial YSZ on Si by Pulsed Laser Deposition …
2018年4月10日 · In order to avoid these issues, yttria-stabilized zirconia (YSZ) can be used as a buffer layer to incorporate epitaxial oxides on Si. During growth in reducing conditions, the …
宽禁带科技论|使用激光图案化衬底方法在Ir/YSZ/Si (001)复合衬底 …
2024年7月8日 · 该成果以“ Growth of two-inch free-standing heteroepitaxial diamond on Ir/YSZ/Si (001) substrates via laser-patterned templates ”为题目，在Journal of Semiconductors上以短通 …
Epitaxial growth of graphene on Ir(111) by liquid precursor deposition
2011年8月12日 · The epitaxial growth of graphene on the surface of an Ir/YSZ/Si (111) multilayer substrate via the deposition of a liquid carbon precursor (acetone) was investigated by x-ray …
Erbium-Doped Yttria-Stabilized Zirconia Thin Layers for …
In this article, we demonstrate hybrid photonic platform with an Erbium-doped (Er-doped) Yttria-Stabilized Zirconia (YSZ) thin film used as an active luminescent cladding on top of low-loss …
半导体所在大尺寸金刚石单晶异质外延生长方面取得进展
2024年7月17日 · 在铱（Ir）复合衬底上结合偏压增强成核技术的异质外延方法是目前制备大尺寸单晶金刚石研究最广泛的方法。 然而，在实际中实现大尺寸异质外延金刚石仍然具有挑战性。
In situ boron doping during heteroepitaxial growth of diamond on Ir/YSZ ...
2012年8月8日 · In situ boron doping of heteroepitaxial diamond films grown by microwave plasma chemical vapor deposition on Ir/YSZ/Si (001) is investigated. The study comprises the analysis …