
Epitaxial indium tin oxide films deposited on yttrium stabilized ...
2021年1月15日 · Epitaxial indium tin oxide (ITO) films were successfully prepared on Yttrium Stabilized Zirconia (YSZ) substrates by direct current magnetron sputtering. The epitaxial relationships between ITO films and YSZ substrates were confirmed as ITO (100) || YSZ (001) by XRD θ-2θ scans and phi-scans.
Multilayered YSZ–Ag–Mo/TiN adaptive tribological ... - Springer
2006年11月15日 · In an effort to increase the wear lifetime and move toward thermal cycling capabilities of solid adaptive lubricants, a multilayer coating architecture incorporating two layers of adaptive YSZ–Ag–Mo nanocomposite lubricant separated by a …
Tribological analysis of electrostatically developed multi (YSZ, TiN ...
2020年3月1日 · Yttria-stabilized zirconia (YSZ), Titanium Nitride (TiN), Silicon carbide (SiC) nanocomposite coating deposited with the help of electrostatic spray coating technique were investigated with respect to coating microstructure, tribological and mechanical properties as a measure of efficiency.
釔安定氧化鋯 - 维基百科,自由的百科全书
釔安定氧化鋯 (英文:Yttria-stabilized zirconia, YSZ) 是一種陶瓷材料,藉由添加氧化釔改變二氧化锆的相變態溫度範圍,產生室溫下穩定的立方晶體及四方晶體。
Pulsed excimer laser ablation deposition of YSZ and TiN/YSZ …
2003年3月15日 · We report on the deposition of thin Yttria-stabilized zirconia (YSZ) films and TiN/YSZ bilayers on Si substrates at room temperature by pulsed KrF excimer laser ablation deposition (PLD). YSZ films were deposited onto (1 0 0) Si substrates by ablating an YSZ target in vacuum and in low-pressure oxygen atmosphere.
添加氮化钛钇稳定氧化锆微结构与性能-期刊-万方数据知识服务平台
2014年8月1日 · 摘要: 为了获得强度高、韧性好,电加工性能优异的陶瓷材料替代碳化钨冲头解决粘模的问题,在钇稳定氧化锆(YSZ)中添加不同配比导电氮化钛(TiN)粉末制成复合材料.对烧结坯进行密度、维氏硬度、抗弯强度,破坏韧性等机械性质测量及电阻率测试,并借助XRD、SEM鉴定 ...
Epitaxial ferroelectric Hf0.5Zr0.5O2 thin film on a buffered YSZ ...
2018年8月9日 · In this study, we used pulsed laser deposition to successfully grow epitaxial Hf 0.5 Zr 0.5 O 2 (HZO) films on (001)-, (011)- and (111)-oriented yttria-stabilized zirconia (YSZ) substrates using TiN as the bottom electrode. It is found that the TiO 2 buffer layer formed by the interface reaction is the key to epitaxial growth.
Highly oriented indium tin oxide films for high efficiency organic ...
2002年4月15日 · Highly oriented indium tin oxide (ITO) thin films were grown by pulsed-laser deposition (PLD) on glass and single-crystal yttria-stabilized zirconia (YSZ) substrates. The structural, electrical, and optical properties of these films were investigated as a function of oxygen partial pressure.
钇稳定氧化锆 (YSZ)修饰导电氮化钛 (TiN)复合材料|W–Ti–TiN复合 …
TiN是一种新型材料,具有硬度高(显微硬度为21Gpa)、熔点高(2950℃)、化学稳定性好的特点,是一种很好的难熔耐磨材料。 氮化钛还具有良好的导电性(室温电阻为3.34×10-7Ωcm),可用作熔盐电解的电极和电触头等导电材料。
YSZ单晶是什么?有哪些物理性质? - 鑫科汇
2025年2月5日 · ysz,全称为氧化锆(zro2)单晶基片,其中掺入了钇元素(y)以增强其稳定性。这种材料因其优良的机械和化学稳定性而被广泛应用。其物理性质具体表现为: 晶体结构:ysz单晶具有明确的单晶结构,这使得它在许多应用中能够表现出优异的性能。