2014年2月1日 · ZnO and related semiconductors are alternatives to GaN-based compounds for fabrication of UV/blue light emitting diodes (LEDs). Progress in development of ZnO LEDs has been disappointing due to the difficulty of achieving robust p-type doping and the low crystal quality of heterojunctions and quantum wells.

2021年1月1日 · ZnO, a II–VI compound semiconductor with a wide bandgap of ~3.4 eV, is a versatile material with a wide range of applications in optical devices (like light-emitting diodes (LEDs), ultraviolet (UV) laser, optical waveguides, and solar cells), field emission devices, photocatalysis, UV sensors, security printing, as an antibacterial agent, and in...

2017年5月1日 · ZnO is an n-type, wide band gap (3.37 eV) semiconductor and has attained a commanding position in the field of semiconductor devices, optoelectronics, photovoltaics, gas sensing, piezoelectric applications and phosphor coated light emitting diodes (pc-LEDs) [1]. ZnO is available in large scale and it has been widely used due to its device ...

2024年1月15日 · 钙钛矿led器件表现 在高质量GuaI-CsPbI3薄膜的基础上，研究人员设计了一种具有SnO2/ZnO双层电子传输层的新型器件结构，成功实现了高亮度、高效率、长寿命的钙钛矿LED原型器件。

ZnO 是一种直接带隙半导体，导带底和价带顶都位于布里渊区中心 Γ 点处，室温下的带隙宽度（实验值）为 3.376eV。 价带对应于 O 2p 电子束缚态，具有六重简并特征，而导带则是由 Zn 4s 电子态所组成。 由于受到晶体场作用和自旋轨道耦合的影响，ZnO 价带分裂为三个双重简并的子带，分别对应于子带 A、B 和 C，如图 4-2 所示。 自旋轨道耦合倾向于解除具有相同波函数但具有不同自旋方向的简并度，通常将六度简并的价带分裂为四度简并（j=3/2）和两度简并（j=1/2） …

2022年11月30日 · Here in this work, based on the mechanisms of positive aging, we propose a bilayer design of ETL in which ZnO NPs are used to maintain high electron conduction, capping ligands reduce the surface...

2020年5月22日 · Zinc oxide (ZnO) nanoparticles (NPs) are widely used as electron-transport layers in quantum dots (QDs) light-emitting diodes (QLEDs). In this work, we show that the size of the NPs can be tuned with the sol–gel synthesis temperature while keeping a constant mass yield.

In this review, we focus primarily on ZnO-based functional nanomaterials, exclusively used in solution-processed QLEDs. A wide variety of ZnO-based ETL modification methods have been explored within the research community to date.

由于zno纳米粒子具有较高的电子迁移率、合适的能级和固有的稳定性，被广泛应用于大多数已报道的qled中作为电子传输层(etl)以实现高性能。 在ZnO ETL的QLED中经常会出现电荷注入不平衡的障碍，这是因为Cd基量子点的深价带能级比电子注入产生的空穴注入势垒更大。

2025年3月10日 · The PDs comprise of ZnO NWs, as photosensitive materials, bridging the electrode based on conductive nanofibres on CA substrate. ... The light intensity of the LED was varied from 0.1 to 2 μW/cm ...