2024年6月5日 · Here, authors synthesize a potential host system — monolayer ZrTe5 — and demonstrate it possesses a band gap wide enough for potential room-temperature applications.

2018年3月19日 · Magnetotransport measurements show that ZrTe5 exhibits an anomalous Hall effect without magnetic ordering, a signature of Berry curvature introduced by Weyl nodes.

2019年5月8日 · Here we report the experimental realization of the 3D QHE in bulk zirconium pentatelluride (ZrTe 5) crystals. We perform low-temperature electric-transport measurements on bulk ZrTe 5 crystals...

Here, through employing a clean dry-transfer fabrication method in an inert environment, we successfully obtain high-quality ZrTe 5 thin devices that exhibit clear dual-gate tunability and ambipolar field effects.

北京大学物理学院理论物理研究所黄华卿课题组发现拓扑材料五碲化锆（ZrTe5）薄膜中的自发空间反演对称性破缺现象，并揭示该现象源自层间滑移和细微的层内畸变，进而预测了由对称性破缺导致的非线性反常霍尔效应和动态磁电响应，为调控层状拓扑材料的 ...

最近，理论计算预言，单层的ZrTe 5 / HfTe 5 是大能隙的量子自旋霍尔材料，在体能隙中存在着受拓扑保护的边缘态。 块材ZrTe 5 / HfTe 5 可能处于强弱拓扑绝缘体态的边界，随着层间距的减小，ZrTe 5 / HfTe 5 有可能会由弱拓扑绝缘体转变为强拓扑绝缘体，并且温度引起的层间距减小有可能诱导这种拓扑相变。 理论预言引发了大量关于ZrTe 5 的实验研究，但对其拓扑本质仍然众说纷纭，没有定论。 高分辨角分辨光电子能谱对ZrTe 5 电子结构的直接测量，对理解其奇特输运 …

2019年8月9日 · We report measurements of strain dependence of electrical transport properties of ZrTe 5, which is known to host massive Dirac fermions in the bulk due to its proximity to a topological phase transition. We observe that the resistivity exhibits a …

2016年4月28日 · We report an atomic-scale characterization of $ {\mathrm {ZrTe}}_ {5}$ by using scanning tunneling microscopy. We observe a bulk band gap of $\ensuremath {\sim}80\text { }\text { }\mathrm {meV}$ with topological edge states at the step edge and, thus, demonstrate that $ {\mathrm {ZrTe}}_ {5}$ is a two-dimensional topological insulator.

2021年1月18日 · Here, we visualize the topological states of the WTI candidate ZrTe5 by spin and angle-resolved photoemission spectroscopy (ARPES): a quasi-1D band with spin-momentum locking was revealed on the...

2018年12月7日 · Here we have explained this by temperature-induced swapping of the dominating carriers from holes to electrons, evidenced by magneto-transport and angle-resolved photoemission spectroscopy (ARPES) measurements on single crystal ZrTe 5 samples.