2024年6月5日 · By combining scanning tunneling microscopy/spectroscopy (STM/STS) measurements with first-principles calculations, we determined the atomic structures of the two ZrTe 5 isomers and revealed an...

2016年5月10日 · Using scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy of single crystals, we observe a large full band gap of approximately 0.1 eV on the surface of the crystal and a finite density of states, which is nearly constant within the entire gap, at the monolayer step edge.

2017年8月1日 · In this work, combining investigations of angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM), we systematically studied the electronic properties of ZrTe 5. In intrinsic samples, we observed little evidence for the existence of topological surface states or large bulk gap.

2021年12月14日 · In this study, we prepare single crystals of Ti x Zr 1-x Te 5 with a highly anisotropic Fermi surface. Our detailed electrical transport measurements reveal that the crystals show the Lifshitz...

2021年1月18日 · Here, we visualize the topological states of the WTI candidate ZrTe 5 by spin and angle-resolved photoemission spectroscopy (ARPES): a quasi-1D band with spin-momentum locking was revealed on the...

2019年8月9日 · We report measurements of strain dependence of electrical transport properties of ZrTe 5, which is known to host massive Dirac fermions in the bulk due to its proximity to a topological phase transition. We observe that the resistivity exhibits a …

潘庶亨研究组的博士生武睿和丁洪研究组的博士生马均章和钱天副研究员分别利用扫描隧道显微镜（stm）和角分辨光电子能谱（arpes）对zrte 5 单晶解理表面电子态进行测量。

Our findings identify a new non-centrosymmetric phase of ZrTe5 and provide a platform to probe and control local quantum geometry via crystal symmetries.

五碲化锆(ZrTe_5)表面原子结构和电子态STM/STS的研究. 西安齐岳生物科技有限公司提供各种石墨烯、钙钛矿、量子点、纳米颗粒、空穴传输材料、纳米晶、半导体聚合物、超分子材料、过渡金属配合物、化学试剂、等一系列产品。 碲化物英文名叫telluride，是碲与金属或非金属的一种化合物，无色；金属碲化物有碲化铜，难溶于水. 用于STM实验的五碲化锆(ZrTe_5)样品制备： 先将单晶样品用导电银胶粘在样品架上的铜片上，利用加热台在150C下烘烤8分钟后银胶凝固，样品 …

2016年4月28日 · We report an atomic-scale characterization of $ {\mathrm {ZrTe}}_ {5}$ by using scanning tunneling microscopy. We observe a bulk band gap of $\ensuremath {\sim}80\text { }\text { }\mathrm {meV}$ with topological edge states at the step edge and, thus, demonstrate that $ {\mathrm {ZrTe}}_ {5}$ is a two-dimensional topological insulator.