Qorvo's TGA4516 is a high power amplifier (HPA) MMIC for Ka band applications. The part is designed using Qorvo's 0.15um power pHEMT process. The small chip size is achieved by utilizing Qorvo's 3 metal layer interconnect (3MI) design technology that allows compaction of the design over competing products.

This letter presents the design and experimental characterization of a K-band high power amplifier (HPA) monolithic microwave-integrated circuit (MMIC) for the next generation of very high throughput satellites (vHTS).

The CMPA601J025 is a 25 W MMIC HPA utilizing The high performance, 0.15um GaN on SiC production process. The CMPA601J025 family operates from 6 - 18 GHz and supports a variety of end applications such as electronic warfare, test instrumentation, radar and general amplification.

2024年7月3日 · In this paper, we introduce guidelines for designing GaN HPA MMICs, from device sizing to meeting high-power specifications, power matching considering source via effects, schematic design of three-stage amplifier structures, and …

2014年9月1日 · A Ku-band high-power and high-power-added efficiency (PAE) high-power amplifier (HPA) monolithic microwave-integrated circuit (MMIC) is demonstrated with a 0.25 μm gallium nitride (GaN) high electron mobility transistor technology on a silicon carbide substrate.

In this paper, the design and performance of a three-stage Ka-Band balanced high power amplifier (HPA) MMIC are presented. The proposed HPA utilizes the 150-nm

Ø In this paper we present first, the results of a study conducted to investigate the microwave performance of a wideband (25-31 GHz) GaN MMIC distributed high power amplifier (HPA) Ø Second, we compare and contrast the above performance with that of an alternate architecture that relies on two HPAs to provide contiguous 25-31 GHz coverage.

The CMPA1D1J001S is a 1W package MMIC HPA utilizing The high performance, 0.15um GaN on SiC production process. The CMPA1D1J001S operates from 12.7-18 GHz and supports both radar and communication applications within both military and commercial markets.

In this paper, the design and analysis of a 2.0 to 18.0 GHz distributed high-power amplifier (DHPA) monolithic microwave integrated circuit (MMIC) on 150-nm GaN-SiC HEMT process has been presented. By employing 8-cell 2-level-stacked architecture, ultra-wide bandwidth and good power performance are achieved simultaneously.

2024年11月15日 · Recent MMIC designs focus on GaN HEMT processes with gate lengths less than 0.2 μm on SiC substrates, achieving PAEs exceeding 30% and output powers nearing 100 W. Utilizing advanced heat dissipation packaging from MIC design, Ku-band GaN HEMT amplifiers are anticipated to expand into both GaN-on-SiC and cost-effective GaN-on-Si MMICs.