Abstract: In this article, we present an analysis of the gate degradation induced by long-term forward gate stress in GaN-based power HEMTs with p-type gate, controlled by a Schottky metal-retracted/p-GaN junction. In particular, time-dependent gate breakdown and threshold voltage instability are investigated as function of different geometries ...

2024年4月12日 · This study demonstrates a particular composited barrier structure of high-electron-mobility transistors (HEMTs) with an enhancement mode composed of p-GaN/GaN/AlN/AlGaN/GaN. The purpose of the composite barrier structure device is to increase the maximum drain current, reduce gate leakage, and achieve lower on …

2020年11月1日 · Devices feature the gate metal retraction (GMR) process step, which consists in removing ~130 nm of TiN gate metal interlayer from the edges of the gate in order to avoid the breakage at the gate sidewalls [20, 21]. The access regions were passivated by a dielectric stack containing Al 2 O 3 and SiO 2.

2018年5月1日 · For the selective etch of the p-GaN, low power Cl 2-based processes, at a low etch rate, are indicated to define the p-GaN gate region, without significant alteration of the surface morphology and 2DEG properties in the access regions. One of the most critical parts of the device is the p-GaN layer and its gate electrode.

在本文中，我们分析了由肖特基金属缩回/p-GaN 结控制的 p 型栅极基功率 HEMT 中长期正向栅极应力引起的栅极退化。 特别是，随时间变化的栅极击穿和阈值电压不稳定性作为不同几何形状、栅极偏置和温度的函数进行研究。

2024年7月5日 · 戴心玥博士创新提出了一种具有欧姆岛镶嵌的p-GaN栅（Island Ohmic p-GaN gate, 简称IO-PGaN）增强型AlGaN/GaN HEMT器件结构，成功实现了稳定的阈值电压和较大的栅极摆幅。

In this article, we present an analysis of the gate degradation induced by long-term forward gate stress in GaN-based power HEMTs with p-type gate, controlled by a Schottky metal-retracted/p-GaN junction.

2018年11月6日 · Abstract: The gate conduction mechanisms in p-gallium nitride (GaN)/AlGaN/GaN enhancement mode transistors are investigated using temperature-dependent dc gate current measurements. In each of the different gate voltage regions, a physical model is proposed and compared to experiment.

增强型氮化镓（GaN）基高电子迁移率晶体管（high electron mobility transistor，HEMT）是高频高功率器件与开关器件领域的研究热点，P-GaN栅技术因具备制备工艺简单、可控且工艺重复性好等优势而成为目前最常用且唯一实现商用的GaN基增强型器件制备方法。

2022年3月1日 · However, biasing GMR p-GaN HEMT at VG > 8 V and T > 80 °C, a new degradation mechanism shows up, possibly altering the lifetime even at low VG operation.