We report on lateral pin and vertical pin germanium (Ge) photodetectors selectively grown at the end of silicon waveguides. The responsivities of the two types of devices at 1550 nm were measured, with the corresponding values of 0.616 A/W and 0.215 A/W. Open eye diagrams at 40 Gb/s were demonstrated under -2 V bias at the wavelength of 1550 nm.

2025年1月1日 · Here we present a nanoengineered PIN-photodiode made of CMOS-compatible germanium (Ge) that achieves a verified external quantum efficiency (EQE) above 90% over a wide wavelength range (1.2–1.6...

We report a high-speed PIN photodetector fabricated on Ge with planar interdigitated p/sup +/ - and n/sup +/ -fingers that were formed by ion implantation into a Ge substrate. The 3-dB bandwidth and the external quantum efficiency were measured on a photodetector having 1-μm finger width and 2-μm spacing with 50 × 50 μm 2 active area.

筱晓光子库存备有各种有效面积和封装的PIN结二极管 (PD)，包括铟镓砷 (InGaAs)、磷化镓 (GaP)、硅 (Si)和锗 (Ge)光电二极管。 我们有高速硅光电二极管。 也有在900到2600 nm的范围内具有高响应率，其探测波长超过典型铟镓砷光电二极管的1800 nm。 双波段光电二极管，它集成了上下紧贴在一起的两个光电探测器 (硅基底在上，铟镓砷基底在下)，组合波长范围从400到1700 nm。 为了丰富我们的光电二极管产品线，我们提供已安装的光电二极管便于客户供电即用， …

不过，最流行的方法是使用外延锗（Ge），它在电信波段具有吸收性，与 CMOS 兼容，可提供小型、快速、响应灵敏和低功耗的探测器。 PIN 二极管基础知识 PIN 二极管是一种在 p 型和 n 型区域之间夹有未掺杂本征区域的器件，如图 2 所示。它是光电探测器、太阳能 ...

Ge/Si PIN光电探测器是用于光通信接收端的光电转换器件，其基于8英寸CMOS工艺制作，使用硅基外延生长的纯锗作为光吸收材料，可以对450nm~1550nm波长范围的光产生吸收。

Ge-on-Si PIN photodiode converts optical signal to electrical signal at receiver side of optical communication. The absorption material is germanium (Ge) hetero-epitaxial grown on silicon (Si), whose absorption optical wavelength covers 450nm~1550nm.

A High Performance Ge PIN Photodiode has been demonstrated, integrated into a high volume-capable foundry Silicon Photonics Production Process. It features 0.9 A/W responsivity, 67 GHz optical bandwidth, and dark current density of 90 mA/cm 2 @-1V.

Ge 锗 大光敏PIN光电二极管（800-1800nm 直径 5mm） 筱晓光子库存备有各种有效面积和封装的PIN结二极管(PD)，包括铟镓砷(InGaAs)、磷化镓(GaP)、硅(Si)和锗(Ge)光电二极管。

2006年8月18日 · For a Ge p-i-n photodetector with a radius of 5 μ m a 3 dB bandwidth of 25 GHz is measured at an incident wavelength of 1.55 μ m and zero external bias. For a modest reverse bias of 2 V ⁠, the 3 dB bandwidth increases to 39 GHz ⁠. The monolithically integrated devices are grown on Si with solid source molecular beam epitaxy.