A 7nm FinFET technology featuring EUV patterning and dual …
2017年2月2日 · We present a 7nm technology with the tightest contacted poly pitch (CPP) of 44/48nm and metallization pitch of 36nm ever reported in FinFET technology. To overcome …
7 nm process - Wikipedia
In semiconductor manufacturing, the "7 nm" process is a term for the MOSFET technology node following the "10 nm" node, defined by the International Roadmap for Devices and Systems …
关于芯片的7nm到底是个啥 - 知乎 - 知乎专栏
CPP反映了整个晶体管单元（CELL）的宽度；而MxP是用来衡量晶体管单元高度的单位，通常被称为Track。 晶体管的高度是MxP的几倍，就叫几个Track，或者几个T
工艺百科-Intel 7nm篇：又强又稳却不上量的宝藏工艺 - 知乎
Intel 7nm 包含Intel 4和Intel 3在内的两个工艺，对标台积电的N4和 N3B ，也是Intel第一个正式采用 EUV光刻机 制造的工艺。在接下来的介绍中，将并行使用Intel 4和Intel 3的材料，二者的基 …
英特尔10nm、格芯7nm工艺深度对比，鳍片形状、功函数金属、 …
2017年12月28日 · 鳍片 - 采用自我校准四重图形技术（SAQP），间距为 34nm，鳍片的高度和宽度分别为 46nm 和 7nm，这是英特尔公司的第三代 FinFET 工艺。 在这次会议上，英特尔提 …
True 7nm Platform Technology featuring Smallest FinFET and …
The combination of 27nm fin pitch (FP) and 54nm contacted poly pitch (CPP) as well as the high density SRAM cell size of 0.0262 um 2 is the smallest in the reported FinFET platform. Further …
Contact architecture for 7nm node. | Download Scientific Diagram
We present a 7nm technology with the tightest contacted poly pitch (CPP) of 44/48nm and metallization pitch of 36nm ever reported in FinFET technology. To overcome optical …
7nm节点胜负已经分？多数据角度对比三星和台积电
2019年1月4日 · 从工艺本身来看，在7nm节点，究竟三星和台积电谁更胜一筹呢？ IC Knowledge的创始人Scotten Jones提出了以下的一些想法： ·接触栅极间距（CPP）——台积 …
A 7nm FinFET technology featuring EUV patterning and ... - IBM …
We present a 7nm technology with the tightest contacted poly pitch (CPP) of 44/48nm and metallization pitch of 36nm ever reported in FinFET technology. To overcome optical …
(PDF) A 7nm FinFET technology featuring EUV patterning and …
2016年12月1日 · We present a 7nm technology with the tightest contacted poly pitch (CPP) of 44/48nm and metallization pitch of 36nm ever reported in FinFET technology. To overcome …