ture forL+ CoGe ,,-, CoGe2 is assessed as 832 *C [80Day], rather than 842 *C [49Pfi], from earlier work. The crystallization of the monogermanide CoGe was inves- tigated at pressures up to 7.7 GPa and temperatures in the range 500 to 1300 *C …

A low temperature process, relying on the catalytic chemical vapor reaction of GeH4 with solid Co layers, is developed to synthesize ultra-thin CoGe2 layers (10–20 nm) on 300 mm Si wafers. The selective reaction of Co with GeH4 results in the direct formation of CoGe2 films crystallizing in the orthorhombic

A low temperature process, relying on the catalytic chemical vapor reaction of GeH 4 with solid Co layers, is developed to synthesize ultra-thin CoGe 2 layers (10-20 nm) on 300 mm Si wafers. The selective reaction of Co with GeH 4 results in the direct formation of CoGe 2 films crystallizing in the orthorhombic structure.

This is a report of measurements of the electrical resistivity and of the Hall coefficient of CoGe and CoGe2 films between 80 and 520 K. Both germanides behave as metallic conductors with...

1990年4月9日 · Specifically, CoGe2@C shows high reversible capacity (1,106 and 973 mAh/cm³ at current density of 50 and 100 mA/g, respectively), stable cycling behavior (93.3% and 98.8% capacity retention at a...

依靠GeH 4与固态Co层的催化化学气相反应，开发了一种低温工艺，以在300 mm硅晶片上合成超薄CoGe 2层（10–20 nm）。Co与GeH 4的选择性反应导致在正交晶结构中结晶的CoGe 2膜的直接形成。在锗化反应条件下进行的详细研究表明，获得低电阻，无缺陷且连续的CoGe 2膜的最佳温度（325°C对400°C）取决于初始Co ...

1996年3月25日 · The partially ionized beam (PIB) deposition technique was used to deposit CoGe2(001) thin films heteroepitaxially on GaAs(100) substrates. The epitaxial arrange

2015年4月15日 · [Show full abstract] energy-resolution electron energy-loss spectroscopy (HR-EELS) based on TEM is a powerful tool for this purpose. By comparing between the experimental and the simulated...

Figure S2. AFM morphologies of CoGe 2 films of different thicknesses that was furnace annealed for different times (1-5 min) in comparison to rapid thermal anneals for a fixed time (5 min).

Thin polycrystalline Co2FeGe films with composition close to stoichiometry have been fabricated using magnetron co-sputtering technique. Effects of substrate temperature (TS) and post-deposition annealing (Ta) on structure, static and dynamic magnetic properties were systematically studied.