2025年1月24日 · The die has CXMT’s new and advanced G4 DRAM generation with 0.0020 µm2 cell size and 16.0 nm feature size (F). CXMT reduced DRAM cell size by 20% from the previous G3 (F=18.0nm) DRAM node (Table 1).

2024年12月31日 · However, according to the findings of a Chinese semiconductor researcher, the die size of CXMT's 16 Gb DDR5 memory IC is 40% larger than that of a competing Samsung chip, which means that it is...

ChangXin Memory Technologies (CXMT, Chinese: 长鑫存储) [a] is a Chinese semiconductor integrated device manufacturer headquartered in Hefei, Anhui, specializing in the production of DRAM memory. As of 2020, ChangXin manufactured LPDDR4 and DDR4 memory on a 19 nm process, with a capacity of 40,000 wafers per month. [1]

This report constitutes a deep analysis of CXMT DDR4 memory. It covers the full memory package and the 8Gb die. The report includes high resolution images of the die and memory cells. The physical analysis and the study of the process used then help estimate the manufacturing cost of CXMT 8Gb dies.

The new product offers a single-die density of 12Gb, with a speed of 6400Mbps, representing a 50% improvement over LPDDR4X, while simultaneously reducing power consumption by 30%*. LPDDR5's RAS features, such as On-Die ECC, enhance reliability and stability and enable more robust data security.

On November28 2023, CXMT announced the launch of several LPDDR5 products, including 12Gb LPDDR5 dies, 6GB LPDDR5 mobile DRAM, and 12GB LPDDR5 mobile DRAM. The 12GB LPDDR5 mobile DRAM represents CXMT's first package-on-package (POP) assembled chip.

2025年1月1日 · 中国の新興メモリメーカーChangXin Memory Technologies（CXMT）が製造を開始したDDR5メモリチップについて、その物理的な特性が明らかになった。 最新の分析によると、同社の16Gb

快科技2月12日消息，据韩国媒体报道，长鑫存储（CXMT）正在加速开发下一代DRAM技术，其并未按原计划为首款商用DDR5产品采用的17nm,而是直接采用了16nm制程技术。

2020年7月14日 · This is the first DDR4 DRAM product fabbed from CXMT and the first 8 Gb DRAM die from China. The cell size is 0.0045 um2 with a bit density of 0.102 Gb/mm2. The authoritative information platform to the semiconductor industry.

软件准确辨认出了制造商“CXMT长鑫存储”与A-Die的颗粒编号，2Ranks的规格则表明这是一套 双面内存，单颗粒容量为8Gbit。 但是， 台风却在“22nm”的技术制程上犯了错误 ——公开资料显示，长鑫使用的是更为先进的19nm工艺。