a next-generation lithography technology using an extreme ultraviolet (EUV) wavelength, currently expected to be 13.5 nm. The following 102 files are in this category, out of 102 total.

Extreme ultraviolet lithography (EUVL, also known simply as EUV) is a technology used in the semiconductor industry for manufacturing integrated circuits (ICs). It is a type of photolithography that uses 13.5 nm extreme ultraviolet (EUV) light from a laser-pulsed tin (Sn) plasma to create intricate patterns on semiconductor substrates.

极紫外光 刻（Extreme Ultra-violet），常称作EUV光刻，它以波长为10-14纳米的极紫外光作为光源的光刻技术。 具体为采用波长为13.4nm 的紫外线。 极紫外线就是指需要通过通电激发紫外线管的K极然后放射出 紫外线。 极紫外光刻（英语：Extreme ultra-violet，也称EUV或 EUVL）是一种使用 极紫外 （EUV）波长的下一代光刻技术，其波长为13.5纳米，预计将于2020年得到广泛应用。 几乎所有的 光学材料 对13.5nm波长的极紫外光都有很强的吸收，因此，EUV光刻机的 光 …

5 天之前 · The 2025 Extreme Ultraviolet Lithography (EUVL) and Source Workshop will be held at MIT Lincoln Laboratory, from June 21-26, 2025. This annual workshop, organized by EUV Litho, Inc., is a unique forum to discuss the challenge and progress of EUVL as it is being implemented in state-of-the-art semiconductor manufacturing.

2016年2月28日 · EUVL_printable_defects.png ‎ (593 × 289 pixels, file size: 13 KB, MIME type: image/png)

2021年1月25日 · 极紫外光刻(EUVL)是以波长为11～14nm的EUV射线为曝光光源的微电子光刻技术，适用于特征尺寸为32nm及更细线宽的集成电路的大批量生产。EUV光源的特点决定了EUVL必须采用镀有多层膜的反射光学元件。为满足光刻成像的质量要求，EUVL光学系统像差要控制 …

2023年9月24日 · 极紫外光刻（EUVL）的辐射度 用于EUV光的产生，而工业级EUVL工具主要涉及两种类型的光：脉冲的、高功率的红外（IR）激光用于离子化熔融锡（Sn），以及用于光刻的波长为13.5纳米的光。 前者由专门设计的CO2激光器（波长λ = 10.6微米）提供，其平均功率约为30千瓦，重复频率为50千赫兹。 锡离子化过程包括两个快速连续的IR激光脉冲：一个预脉冲将液滴从球形变成圆盘状，第二个更高能量的主脉冲用于离子化过程。 IR激光的输出对于开发未来的光 …

EUVL is the next-generation lithography (NGL) currently finding its way into fabs for advanced computer chip making. This book is intended for people involved in one or more aspects of EUVL as well as for students, who will find this text equally valuable. This book covers the fundamental and latest status of all aspects of EUVL used in the field.

Since 1995, EUV R&D has been started at the middle size NewSUBARU synchrotron light source of University of Hyogo, which is the largest synchrotron facility operated by university in Japan. Up to now, many significant technology research and development in EUV lithography were done by our research group.

2024年11月28日 · EUVL has emerged as a critical technique, taking advantage of shorter wavelengths to achieve nanoscale feature sizes with higher precision and lower defect rates than previous lithography methods.