These HBT power cells achieve high output power (10+ W for 4000µm devices) with efficiencies of up to 70% at near-class-B operation at 2 GHz. ... High-power GaInP/GaAs HBTs with high breakdown...

Download scientific diagram | SEM image of large-area (60×60 µm 2 ) M-HBT devices revealing well developed crosshatching patterns. from publication: Heavily Doped InP-based HBTs for New...

HBT-F'TZ has completely resolved our process Limita- tions, while maintaining a high performance with reduce process tolerance by using two self-alignment process. Fig. 6 shows an illustration depicting the self-aligned base-collector in HBT-PT2, while Fig. 7 shows the SEM photographs of the completed HBT. The process follows

2001年4月1日 · This work describes the implementation of an experimental procedure to evaluate the reliability of Heterojunction Bipolar Transistors (HBT) on a GaAs substrate. It is based on the separation of aging test accelerating factors applied on two test vehicles: HBT and Transmission Line Model (TLM) structures associated with emitter, base and ...

Better thermal dissipating capability can be achieved by copper pillar bump on the top of InGaP/GaAs HBT for better device performance. GaAs MMICs (monolithic microwave integrated circuits) are widely used in RF modules for portable devices in recent years.

采用015μm 工艺,进行了提高SiGe HBT 器件 f max 的研究. 对不同器件结构进行的分析表明,采用自对 准结构有利于 f max 的提高, 并研制出了 f max = 157GHz 的SiGe HBT 器件. 2 器件的设计 SiGe HBT 器件的台面结构如图1 所示. 该器 件是非自对准台面 SiGe HBT. 其研制工艺是:首

Indium phosphide heterojunction bipolar transistors (HBTs) find applications in very wide-band digital and mixed-signal integrated circuits (ICs).

HBT by modulating the electric field in the collector region. Index Terms—HBT, radiation, SiGe, SOI. I. INTRODUCTION S ILICON-ON-INSULATOR (SOI) CMOS technology has matured over the past 15 years to become mainstream [1]. The thin oxide-isolated silicon layer allows a reduction in device parasitics, a built-in higher operating voltage ...

Abstract In this paper, we present a monolithic integrated 2-stage BiHEMT power amplifier (PA) by a 0.25μm enhancement mode pHEMT (E-pHEMT) as driver stage for power gain enhancement, and a InGaP/GaAs HBT as power stage for maximizing Pout/PAE.

1996年12月15日 · Heterojunction bipolar transistors (HBTs) are mesa structures which present difficult planarization problems in integrated circuit fabrication. We report a multilevel metal interconnect technology using benzocyclobutene (BCB) to implement high-speed, low-power photoreceivers based on InGaAs/InP HBTs.