Multi-quantum-well nanowire heterostructures for wavelength …
2008年8月17日 · Here, we report the first multi-quantum-well (MQW) core/shell nanowire heterostructures based on well-defined III-nitride materials that enable lasing over a broad range of wavelengths at room ...
InGaN/GaN MQW high brightness LED grown by MOCVD
2003年7月1日 · Photoluminescence (PL), X-ray diffraction (XRD), cathodoluminescence (CL), transmission electron microscope (TEM) were performed on the LED wafers to investigate the effects of growth temperature, well width and In composition in the InGaN quantum well on the emitting wavelength of LED.
TEM Characterization of Defects in GaN/InGaN Multi-Quantum …
2008年3月1日 · Transmission electron microscope (TEM) measurements performed on InGaN/GaN multiple-quantum-well (MQW) deposited Silicon substrates have been investigated.By taking high-resolution transmission electron microscopy (HRTEM) imagery,electron diffraction contrast imagery, and electron diffraction image in precincts between the Si substrate and the ...
Effect of well layer thickness on quantum and energy conversion ...
2017年3月1日 · We investigated the effect of well layer thicknesses on the external quantum efficiency (EQE) and energy conversion efficiency (ECE) for InGaN/GaN multiple quantum well (MQW) solar cells grown on sapphire substrates by metalorganic chemical vapor deposition. The results indicated that EQE and ECE have maximum values at a specific well thickness.
InGaN/GaN multiple quantum wells on selectively grown GaN microfacets ...
2016年11月1日 · Phosphor-free InGaN/GaN multiple quantum well (MQW) white light-emitting diodes (LEDs) have the advantages of simpler device process and potentially higher efficiency, and have attracted much attention in recent years. A host of technologies are emerging for implementing such white-light LEDs.
Monolithically integrated InGaAs/AlGaAs multiple quantum well ...
2021年8月24日 · In this paper, we detail the properties of InGaAs/AlGaAs multiple quantum well (MQW) photodetectors (PDs) monolithically integrated by direct epitaxy on 300 mm Si(001) substrates. A MQW high crystalline quality is achieved using 300 mm Ge/Si pseudo-substrates with a low threading dislocation density of 4 × 10 7 cm −2 from electron channeling ...
技術文章-MAtek 閎康科技
2018年2月5日 · 2010年以來，設備廠商改善了電子槍（FE-Gun）的發射效率，同時製造了EDX接收器的面積到100 mm2以上，甚至可以同時加裝四組偵測器在TEM主槍體四周，因此EDX的成份偵測效率大幅提高；我們以同樣的白光LED量子井（Multiple Quantum Well, MQW）和超晶格（Superlattice, SL ...
2020年4月5日 · Understanding the recombination nature in a polar InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) or similar device is critical for their further performance enhancements. This paper reports a new theoretical model for investigating the recombination dynamics in MQW LEDs, which more comprehensively takes both localized exciton
High resolution TEM images of the InGaN/GaN MQW sample.
Green emitting InGaN/GaN multi-quantum well samples were investigated using transmission electron microscopy, photoluminescence (PL), and time-resolved photoluminescence (TRPL) spectroscopy. Weak...
Multi-Quantum Well (MQW) Edge Emitting Laser – Ansys Optics
In this example, we demonstrate a workflow for simulating the L-I curve of an InGaAsP-InP multiple-quantum-well (MQW) edge-emitting laser (EEL). Calculated L-I curves and lasing frequencies at different temperatures are compared to results reported in the literature.