Visualization of Confined Electrons at Grain Boundaries in a …
2023年11月20日 · Our scanning tunneling microscopy (STM) measurements, accompanied by the first-principles calculations, reveal that there are two types of well-defined grain boundaries …
Charge density wave order in 1D mirror twin boundaries of
2016年4月18日 · We provide direct evidence for the existence of isolated, one-dimensional charge density waves at mirror twin boundaries (MTBs) of single-layer semiconducting MoSe …
Strongly enhanced charge-density-wave order in monolayer NbSe2 …
2015年7月20日 · Enhanced electron–phonon interactions in mono- and few-layer NbSe2 result in a significantly increased transition temperature of charge density waves compared with values …
Monolayer 1T-NbSe2 as a Mott insulator | NPG Asia Materials
2016年11月4日 · Here we report the first experimental realization of a monolayer 1 T -NbSe 2 crystal grown epitaxially on bilayer graphene. In contrast with 2 H -NbSe 2, monolayer 1 T …
Electronic structure of single layer 1T-NbSe2: interplay of lattice ...
2018年7月23日 · In this paper, we provide a first-principles-based account of the electronic structure of monolayer 1T-NbSe 2, including electron–electron interaction effects and lattice …
Charge Transfer Gap Tuning via Structural Distortion in Monolayer 1T-NbSe2
2021年8月5日 · Monolayer NbSe 2 surprisingly displays two types of star of David (SD) motifs with different charge transfer gap sizes, which are interconvertible via temperature variation. In …
Atomically Sharp 1D Interfaces in 2D Lateral Heterostructures of …
2024年11月2日 · Here, we present direct synthesis of a superconductor-magnet hybrid heterostructure by combining superconducting niobium diselenide (NbSe2) with the monolayer …
NbSe2 | Ji Group@Renmin Univ. - ruc.edu.cn
Mirror twin boundaries (MTBs) [14,15] was demonstrate to be another strategy to introduce additional exotic electronic states in chalcogen-deficient 1H-MoS 2[16], -MoSe2 [14], and – …
论文精读：NC VSe2/NbSe2异质结近藤晶格实验与理论计算-CSDN …
2024年11月28日 · 通过指数拟合裸NbSe2和单层VSe2的超导间隙尺寸，插层VSe2薄膜的超导邻近衰减长度估计为2.1 ~ 3.1 nm，比未插层的VSe2薄膜大。 采用两种拟合方法，一种是拟合超 …
新热点！一个月两篇Nature子刊，PPMS助力NbSe2超导特性新研 …
宾夕法尼亚州立大学常翠祖教授研究组使用分子束外延方法在单层NbSe2上生长可控厚度的Bi2Se3薄膜，并通过优化生长过程，实现拓扑绝缘体/Ising超导体异质结超导性的保持 [6]。 …