55V Single N-Channel Power MOSFET in a TO-247 package.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO …

ISD £ 59A, di/dt £ 290A/μs, VDD £ V(BR)DSS, TJ £ 175°C Pulse width £ 300μs; duty cycle £ 2%.

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all …

2022年5月22日 · IRFP064N is an N Channel metal oxide semiconductor field effect transistor or MOSFET. It is available in TO-247 package and has many features. It is a ruggedized device …

IRFP064NPBF – N-Channel 55 V 110A (Tc) 200W (Tc) Through Hole TO-247AC from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key …

Part #: IRFP064. Download. File Size: 171Kbytes. Page: 6 Pages. Description: Power MOSFET (Vdss=60V, Rds (on)=0.009ohm, Id=70*A). Manufacturer: International Rectifier.

IRFP064NHEXFET® Power MOSFETPD - 9.1383AFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per …

Ultra low on-resistanceDatasheet