2015年5月4日 · Here, we report a reversible structural phase transition between the hexagonal and stable monoclinic (distorted octahedral or 1T′) phases in bulk single-crystalline MoTe 2. Furthermore, an...

2022年5月24日 · In this work, we investigated the structure and morphology of the MBE-grown MoTe 2 monolayer on GaAs (111)B using scanning tunneling microscopy (STM), electron diffraction, and X-ray...

2024年10月23日 · In this research, we introduce a PdSe 2 /2H–MoTe 2 heterojunction photodetector that exhibits both broadband self-powered photodetection and linear/circular polarization detection capabilities. It has a broad spectral response range (covering 375–2200 nm) and reaches a peak sensitivity at 532 nm, exhibiting a notable responsivity of 7.3 × ...

本文精选 在过去的十年中，二碲化钼 （MoTe2） 因其结构特征和源自它们的独特性能而受到科学界的极大关注。在目前的综述中，介绍了 MoTe2 的性质、各种制备方法和多种应用。 ... MoTe2 的多相结构（例如1T'和2H相）提供了独特的电学和光学性能调谐可能性。 ...

2024年10月11日 · Raman spectroscopy confirms the growth of the 2H and 1T′ phases of MoTe 2. Then, we extensively study the optical properties of the 2H and 1T′ phases having variable nanodimensional thicknesses of MoTe 2 films using spectroscopic ellipsometry (SE). SE is a powerful technique for characterizing thin films, providing valuable information ...

2018年4月1日 · The 2H structure in MoTe 2 shows the ABA atomic stacking sequence whereas the 1T and 1T ′ demonstrate the ABC atomic stacking sequence. For the 2H and 1T, the atomic lattice can be well defined by the hexagonal lattice constant (α) and the Mo–Te bond length. In this study, the lattice constants for the 2H and 1T phases were predicted to be ...

2024年9月16日 · Here, we fabricate locally phase-engineered MoTe 2 optoelectronic devices, creating a metal (1T′) semiconductor (2H) lateral junction and unveil the main mechanisms at play for photocurrent generation. We find that the photocurrent originates from the 1T′–2H junction, with a maximum at the 2H MoTe 2 side of the junction.

We demonstrate the distinct ultrafast recombination behaviors of spin-orbital splitting bands in bulk 2H-MoTe2 by time- and angle- resolved photoemission measurements. The femtosecond laser excited the splitting valence bands, which are distinguished in time domain exhibit an identical band upshift of ~19 meV and a band broadening of ~26 meV.

2、2H-MoTe2光电性能表征 为了进一步比较两种生长条件下得到的晶体质量，分别使用高温和低温条件下生长的MoTe2晶体制备得到场效应晶体管器件，对其电学以及光电性能进行表征。 实验结果证明，高温下得到的2H-MoTe2晶体的场效应迁移率仅为3.4cm2·V-1·s-1，而低温 ...

2022年8月16日 · 通过将 2H-MoTe 2 薄膜与1英寸Si晶圆集成，合作团队制备了垂直p-n异质结阵列，该阵列表现出 100% 的器件良率、高器件性能和优异的均匀性（图4）。合作团队的方法为二维半导体2H-MoTe 2 薄膜与其他衬底的异质集提供了可能性。