
2N5401(RANGE:100-150) - 立创商城
下载2N5401 (RANGE:100-150)中文资料、引脚图、Datasheet数据手册,有三极管 (BJT)详细引脚图及功能的应用电路图电压和使用方法及教程。
PNP high-voltage transistor 2N5401 FEATURES •Low current (max. 300 mA) •High voltage (max. 150 V). APPLICATIONS •General purpose switching and amplification •Telephony applications. DESCRIPTION PNP high-voltage transistor in a TO-92; SOT54 plastic package. NPN complement: 2N5551. PINNING PIN DESCRIPTION 1 collector 2 base 3 emitter
2N5401 Datasheet (PDF) - NXP Semiconductors
Part #: 2N5401. Download. File Size: 43Kbytes. Page: 8 Pages. Description: PNP high-voltage transistor. Manufacturer: NXP Semiconductors.
2n5401 http://onsemi.com 5 package dimensions to−92 (to−226) case 29−11 issue am notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x−x v c ...
2N5401_JSMSEMI(杰盛微)_2N5401中文资料_PDF手册_价格-立创 …
2n5401由jsmsemi(杰盛微)设计生产,立创商城现货销售。 2N5401价格参考¥0.0461。 JSMSEMI(杰盛微) 2N5401参数名称:晶体管类型:PNP;集电极电流(Ic):600mA;集射极击穿电压(Vceo):150V;耗散功率(Pd):625mW;直流电流增益(hFE):150@10mA,5V;特征频率(fT):100MHz;集电极截止 ...
The 2N5401 and SOC5401 are bipolar transistors able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5202/014 specification and available in LCC-3 and UB hermetic packages, they are specifically recommended for space and harsh
2N5401 Transistor Pinout, Features & Datasheet - Components101
2018年11月26日 · 2N5401 is a PNP transistor designed specifically for high voltage - low power switching applications and amplifications. The NPN complementary for the device is 2N5551 and is available in TO-92, SOT54.
2N5401参数_双极性晶体管芯片中文资料_ON Semiconductor - 百 …
2N5401 ON Semiconductor 双极性晶体管芯片中文资料PDF, 共(5)页, 2N5401数据手册有芯片封装TO-226-3和参数资料, 放大器晶体管PNP硅 Amplifier Transistors PNP Silicon。 2N5401参数_双极性晶体管芯片中文资料_ON Semiconductor - 百芯EMA
General Purpose and Low VCE(sat) Transistors | 2N5401 - onsemi
This PNP Bipolar Transistor is designed for use in industrial and consumer applications. The device is housed in the TO-92 package, which is designed for medium power applications. Product services, tools and other useful resources related to 2N5401. If you wish to buy products or product samples, please log in to your onsemi account. I C Cont. (A)
2N5401 Datasheet, PDF - Alldatasheet
2N5401 is a small signal PNP bipolar junction transistor that is commonly used for amplification, switching, and voltage regulation in electronic circuits. It has a maximum collector current rating of 600 mA and a maximum collector-emitter voltage rating of 150 V.
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