Description: Silicon N-Channel MOS FET (HF/VHF power amplifier). Manufacturer: Hitachi Semiconductor.

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HF/VHF power amplifier. Features. • High breakdown voltage • You can decrease handling current. • Included gate protection diode • No secondary–breakdown • Wide area of safe operation • Simple bias circuitry • No thermal runaway. Outline. 2SK410. Absolute Maximum Ratings (Ta = …

DESCRIPTION: The ASI 2SK410 is a silicon n-channel mos fet designed for HF/VHF power amplifier applications. FEATURES: • PG = 17 dB typ. at 100 W/28 MHz • Omnigold™ Metalization System • Common Source configuration • RoHS compliant

部件名: 2SK410. 下载. 文件大小: 50Kbytes. 页: 10 Pages. 功能描述: Silicon N-Channel MOS FET (HF/VHF power amplifier). 制造商: Hitachi Semiconductor.

2SK410 SILICON N-CHANNEL MOS FET PACKAGE STYLE .500 6L FLG DESCRIPTION: The ASI 2SK410 is a silicon n-channel mos fet designed for HF/VHF power amplifier applications.

Part #: 2SK410. Description: Silicon N-Channel MOS FET (HF/VHF power amplifier). File Size: 50.65 Kbytes. Manufacturer: Hitachi Semiconductor.

2024年6月2日 · Renesas Electronics's 2SK410 is a trans rf mosfet n-ch 180v 8a 6-pin rfpak-a. in the fet transistors, rf fets category. Check part details, parametric & specs updated 02-JUN-2024 and download pdf datasheet from datasheets.com, a global distributor of electronics components.

2SK410 datasheet, 2SK410 mosfet equivalent, Hitachi Semiconductor, Features and benefits, Stock and price

Alpha Wire offers single conductor hookup wire in 16 - 30AWG with a 300V rating and operating temperatures from -40ºC up to 80º, 90º, and 105ºC. RoHS compliant, the stranded or solid tinned copper hookup wire has many insulation options to meet various temperature and color.