View datasheets for DGTD65T15H2TF by Diodes Incorporated and other related components here.

metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.

Marking of electronic components, SMD Codes 65, 65-, 65910A31A1, 65W, 65p, 65t. Datasheets BAS40-05V, BAS40-05W, TPS65910A31A1RSL, UDZS18B. Main Car Audio DVD Motherboards Mobile Phones Monitors Laptops Printers Tablets TVs ... Schottky diodes: 65t SOT-323 BAS40-05W: NXP: Schottky diodes:

Improve efficiency and solution costs with Silicon Carbide (SiC) discrete power CoolSiC™ Schottky diode portfolio from 600V to 1200V - leading SiC performance.

DO-201AD, Schottky, Diodes and Rectifiers manufactured by Vishay, a global leader for semiconductors and passive electronic components.

4 天之前 · DTSJW-65T-V-T/R Diptronics Tactile Switches SMT Type Washable 6*6 datasheet, inventory, & pricing.

The IDWD60E65E7 is a soft-switching 650 V, 60 A emitter controlled 7 silicon discrete diode with anti-parallel diode in TO-247-2 2pin package.

CoolMOSTM C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching superjunction MOSFETs offering 2 better efficiency, reduced gate charge, easy implementation and 1 outstanding reliability. 3.

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. * This is a standard-grade product. For Automotive usage, please contact Sales. Most Viewed.

2009年2月13日 · BSS-三极管参数及置换, BSS三极管资料查询代换参数型号材料极性功耗集极-基极电压集极-射极电压射极-基极电压最大集电极电流特征频率放大系数 外型封装用途及互换型号VCBVCEVEBICmaxfThFE BSS10 Si npn 300mW 40V 15V 6V 500mA 600MHz 40