The 800 nm process (800 nanometer process) is a level of semiconductor process technology that was reached in the 1987–1990 timeframe, by companies, such as Intel, ATI Technologies, and IBM. [1] The 800 nm process refers to the minimum size that could be reliably produced. The smallest transistors and other circuit elements on a chip made ...

800纳米制程，又稱0.8微米製程，是半导体制造 制程的一个水平，大约于1989年至1990年左右达成。 [ 1 ] [ 2 ] 这一制程由当时领先的半导体公司如 英特尔 和 IBM 所完成。

Gecco ultra ：中心波长：800±20nm；FWHM＞50nm；＞600mW输出平均功率；脉冲持续时间＜215fs ... 中心波长（nm） 800nm±20nm 重复率2 80MHz（70-110MHz可选） 光束尺寸3 0.8mm±0.3mm 脉冲持续时间1 ＜20fs ＜15fs ＜20fs 光谱半高宽FWHM ...

The 800 nm process refers to the level of MOSFET semiconductor fabrication process technology that was reached around the 1987–1990 timeframe, by leading semiconductor companies like Nippon Telegraph and Telephone (NTT), NEC, Toshiba, IBM, Hitachi, Matsushita, Mitsubishi Electric and Intel. Nippon Telegraph and Telephone (NTT) in Japan introduced the 800 nm CMOS process for its 1 Mbit DRAM ...

Ti:sapphire lasers are tunable lasers which emit red and near-infrared light in the range from 650 to 1100 nanometers, operating most efficiently at wavelengths near 800 nm.A Ti:sapphire laser is usually pumped with another laser with a wavelength of 514 to 532 nm.Femtosecond lasers work in pulse mode have short duration and high instantaneous power, enabling to process materials in …

增益介质。一种具有多个简并能级的晶体，电子能级耦合晶格振动能级使得基态和激发态能带变宽。主要吸收峰在 488 nm 处，增益波段在 650nm 到 1200nm ，因此可以产生 3fs 超短脉冲激光。 当脉冲持续时间极短时，在低能量条件下峰值功率可以很高，这有利于材料加工和材料修复。

800 nm 0.002 W TOSA Superluminescent LED - 25nm Bandwidth FWHM - 0.2dB Spectral Ripple EXALOS View. 800 nm 0.005 W Butterfly Superluminescent LED - Forward Voltage of 3V - 5 mW Power in SMF EXALOS View. 800 nm 0.006 W TO-can Superluminescent LED - …

2020年10月1日 · In this study, novel 800 nm-excitable and highly intense green-emitting non-NaY(Gd)F 4-based core/shell/shell (CSS) upconversion nanophosphors (UCNPs) are reported.Scheelite-structured Li(Gd,Y)F 4:Yb,Er core UCNPs are synthesized, followed by the formation of a Nd 3+-doped active shell and inert shell, and the novel Li(Gd,Y)F 4:Yb,Er/LiYF 4:Nd,Yb/LiGdF 4 CSS UCNPs are applied to liver cancer ...

2023年1月11日 · 用800 nm波长(~1.55 eV)的激光束，需要7个光子才能穿过蓝宝石的~10 eV带隙。这意味着激光烧蚀将被限制在焦体积，其强度高于7光子电离的阈值。因此，理论上，MPI可以解释图5中直径<60 nm的陨石坑。在这里，比较图3h, 4b中间的径向极化得到的结果是有趣的。 ...

CW 800 nm Lasers The LRD-0800 Series of Collimated Diode (Semiconductor) Lasers are ideal for applications requiring a wavelength of around 800 nm and a wide range of output power levels from 100 mW to 2 W with a high level of long-term output power stability and long operating lifetime at an aggressively competitive cost.