Overview of all materials prepared by atomic layer deposition (ALD)
2019年1月28日 · Overview of the materials prepared by ALD. Growth of pure elements as well as compounds with oxygen, nitrogen, sulphur, selenium, tellurium, fluorine, and other compounds …
Atomic layer deposition - Wikipedia
Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of …
A brief review of atomic layer deposition: from fundamentals to ...
2014年6月1日 · Atomic layer deposition (ALD) is a vapor phase technique capable of producing thin films of a variety of materials. Based on sequential, self-limiting reactions, ALD offers …
2012年11月1日 · Trimethyl Aluminum (TMA) reacts with the adsorbed hydroxyl groups, until the surface is passivated. TMA does not react with itself, terminating the reaction to one layer. …
Database of ALD processes - Atomic Limits
The pure element has been grown. Compounds with Te; Compounds with F; Compounds with N; Compounds with O; Compounds with S; Compounds with Se; Compounds with; other elements;
薄膜沉积丨原子层沉积（ALD）技术原理及应用 - AccSci英生科技
原子层沉积 (Atomic Layer Deposition, ALD)是一种基于化学气相沉积 (CVD) 的高精度薄膜沉积技术，是将物质材料以单原子膜的形式基于化学气相一层一层的沉积在衬底表面的技术。
2012年11月1日 · Trimethyl Aluminum (TMA) reacts with the adsorbed hydroxyl groups, until the surface is passivated. TMA does not react with itself, terminating the reaction to one layer. …
Atomic Layer Deposition (ALD) - MilliporeSigma
Atomic layer deposition (ALD) showcases innovation in novel structure synthesis, area-selective deposition, low-temperature deposition, and more.
ALD (Atomic Layer Deposition) - 知乎 - 知乎专栏
以原子层为单位沉积技术 “Atomic Layer Deposition (ALD)” 的开发克服了原来的半导体技术局限。 ALD 技术和 CVD, PVD 薄膜生长技术相比具有以下优势：1.大部分ALD 工艺在400度以下的低 …
原子层沉积（ALD, Atomic Layer Deposition）详解 - 网易
2025年1月14日 · ald 是一种精确的薄膜沉积技术，其核心原理是利用化学反应的“自限性”，以原子或分子层为单位逐层生长薄膜。 具体过程包括： 前体吸附 ：将化学前体（Precursor）引入反 …