Epitaxial GaN using Ga (NMe2)3 and NH3 plasma by atomic layer ...
Here, we present a low temperature atomic layer deposition (ALD) process using tris(dimethylamido)gallium(III) with NH 3 plasma. The ALD process shows self-limiting …
Innovative remote plasma source for atomic layer deposition for GaN …
2021年9月21日 · A new low-damage remote plasma ALD system for high-volume manufacturing of Al 2 O 3 for GaN devices was evaluated, the Atomfab. The ion energy and flux values for …
potential to provide ALD film growth and interface treat-ments needed to avoid or repair damage. For GaN devices, thermal ALD of Al2O3 and plasma ALD of AlN have al-ready been used to …
Investigation into the growth mode of GaN thin films on 4H–SiC ...
2024年3月1日 · GaN ultra-thin films are deposited on 4H–SiC substrates using plasma-enhanced atomic layer deposition (PEALD). Our investigation reveals a remarkably narrow temperature …
ALD技术在第三代功率半导体制造环节的创新应用-电子工程专辑
2021年11月10日 · 据了解，思锐智能的先进ald镀膜工艺可显著改善gan器件的综合性能、并已达到量产化的要求。 而ALD技术能够以一个原子的厚度(0.1nm)为精度实现基底表面的镀膜，这是 …
ALD技术使GaN功率器件更高效！ - 牛津仪器
2024年2月4日 · 以下是ALD技术使GaN功率器件增效的五个方面：膜质量 (Film Quality)，一致性 (Conformality)，可控性 (Control)，低损伤 (Low Damage)，预处理 (Pre-treatments)。 氮化镓 …
Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN …
2012年2月21日 · Significant current collapse suppression and dynamic ON-resistance reduction are demonstrated in the ALD-AlN-passivated AlGaN/GaN HEMTs under high-drain-bias …
AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD …
2015年3月4日 · In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is …
GaN Plasma Enhanced Atomic Layer Deposition Publications - plasma-ald…
Your search for plasma enhanced atomic layer deposition publications discussing GaN films returned 41 record (s). If there are too many results, you may want to use the multi-factor …
复合衬底--在GaNoI(绝缘体上氮化镓晶圆)上制造的无缓冲 GaN 基 …
这被认为是由于更好的栅极可控性以及更高的迁移率。事实上，通过去除掩埋氧化物并用ald al 2 o 3重新钝化表面，gan 和掩埋氧化物之间的界面得到了改善。这导致 gan 和 algan/gan 纳米线 …
- 某些结果已被删除