ALD has been applied for the development of logic, memory, sensing and quantum technologies in which ultra-thin metal oxides (Al 2 O 3, HfO 2 and TiO 2 with a physical thickness of less …

ALD is a surface-controlled layer-by-layer process that results in the deposition of thin films one atomic layer at a time. Layers are formed during reaction cycles by alternately pulsing …

Abstract: Atomic Layer Deposition (ALD) is being used for many applications in advanced CMOS technologies, e.g. hi-k materials as gate dielectric, metal materials as metal gate electrode, …

This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections …

This paper introduces ALD Mo as a potential replacement for W and Co as the conductor for logic MOL interconnects. 10nm ALD Mo without a liner and barrier has a very good adhesion on …

2023年9月28日 · Atomic layer deposition (ALD) deposited ZnO is an attractive candidate due to its excellent electrical properties, low processing temperature below copper interconnect …

2014年3月5日 · Atomic layer deposition (ALD) is a key technology enabler of nanoscale memory and logic devices owing to its excellent conformality and thickness controllability. Plasma …

2002年1月1日 · Atomic layer deposition (ALD) of ultrathin high-K dielectric films has recently penetrated research and development lines of several major memory and logic manufacturers …

2014年7月1日 · This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD …

In this paper, selective atomic layer deposition (ALD) TaN barrier process was described for advanced high performance logic device. Compared to conventional ALD deposited barrier, …