The influence of substrate on the adhesion behaviors of atomic …
2011年1月25日 · ALD is an altered CVD growth method that is based on self-limiting mechanism, in which precursors (gases or vapors) are alternately pulsed onto the substrate surface. Since …
TEM characterization of ALD layers in deep trenches using a …
2010年6月1日 · In this work we investigate such ultra thin layers inside deep trench structures in terms of their conformity and layer thickness by high resolution transmission electron …
Nucleation and growth of low resistivity copper thin films on …
2023年11月30日 · The microstructures and elemental composition across the Cu/treated PI interface is investigated by TEM equipped with EDX capabilities. The nucleation and growth …
原子层沉积聚酰亚胺及其对聚合物分离膜改性的研究-学位-万方数 …
原子层沉积 (Atomic Layer Deposition，ALD)是一种高效的薄膜生长方法，可以在基底表面形成均匀保形、以亚纳米级精度生长的薄层。 本论文利用ALD技术沉积PI薄膜，并利用PI对聚醚砜 …
原子层沉积（ALD）工艺揭秘：成功开发、优化和表征 ALD 工艺 …
2024年5月7日 · 原子层沉积技术（ALD）是一种一层一层原子级生长的薄膜制备技术。 理想的 ALD 生长过程，通过选择性交替，把不同的前驱体暴露于基片的表面，在表面化学吸附并反应 …
利用纳米线辅助 TEM 分析优化原子层沉积工艺,Advanced …
2024年2月29日 · 这里提出了一种使用高纵横比纳米线和透射电子显微镜 (tem) 在 ald 沉积过程中优化这些工艺参数的方法。 纳米线样品直接在 TEM 网格上制备，并在沉积过程中放入 ALD …
Transmission electron microscopy (TEM) images of Pd/ALD…
In this paper, the authors demonstrate the atomic layer deposition (ALD) of highly homogeneous and ultrathin (≈3.6 nm) Al2O3 films with very good insulating properties (breakdown field of …
In Situ ALD-TEM System to Study Atomic Nucleation Phenomena
Transmission Electron microscopy (TEM) would be a suitable and widely available technique to accomplish this objective. However, standard instruments have differing vacuum requirements …
HR cross-sectional TEM images of the Al-PI interface (A) in the ...
HR cross-sectional TEM images of the Al-PI interface (A) in the as-deposited state (B) after 200 thermal cycles of ±150°C and (C) after annealing at 300°C for 140 hours. The annealing …
表面预处理和沉积条件对通过原子层沉积的聚合物基底上Al 2 O 3 …
表面预处理和沉积条件对气体渗透性能（包括He，O 2和H 2 O的渗透性）的影响；尺寸; 并通过原子层沉积（ALD）研究了聚合物基底上Al 2 O 3膜的渗透增强缺陷密度和机械柔韧性，从而开 …