Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors (also called "reactants").

2024年5月7日 · 原子层沉积技术（ald）是一种一层一层原子级生长的薄膜制备技术。理想的 ald 生长过程，通过选择性交替，把不同的前驱体暴露于基片的表面，在表面化学吸附并反应形成沉积薄膜。

2015年2月6日 · ALD is a technique for synthesizing catalysts at the atomic level that has gained attention for its application to heterogeneous catalysts in the past few years. ALD provides the ability to synthesize model supported catalysts that can be used to elucidate fundamental catalytic phenomena and offers a number of uniquely powerful opportunities.

原子层沉积 (Atomic Layer Deposition, ALD)是一种基于化学气相沉积 (CVD) 的高精度薄膜沉积技术，是将物质材料以单原子膜的形式基于化学气相一层一层的沉积在衬底表面的技术。

2019年7月18日 · During this workshop it became clear that the main application the semiconductor industry is currently looking at for area-selective atomic layer deposition (ALD), is the fabrication of fully self-aligned vias (FSAV) in the back end of line (BEOL).

2022年4月8日 · Atomic layer deposition (ALD) is a thin-film fabrication technique that has great potential in nanofabrication. Based on its self-limiting surface reactions, ALD has excellent conformality, sub-nanometer thickness control, and good process compatibility. These merits promote the industrial and research applications of ALD in various fields.

What is Atomic Layer Deposition (ALD)? ALD is a sequential, self limiting surface reaction, based on two or more reactants •Precise thickness control •Growth rate is independent of precursor flux once surfaces are saturated •Conformal coating even in high aspect ratio structures •Low pin hole levels •No gas phase reactions generating ...

2017年1月3日 · Atomic layer deposition (ALD) is an emerging and attractive technique for preparing nanoscale ultrathin films because of high uniformity over a large...

2015年1月1日 · Atomic layer deposition (ALD), also referred to historically as atomic layer epitaxy, is a vapor-phase deposition technique for preparing ultra-thin films with precise growth control. ALD is currently rapidly evolving, mostly driven by the continuous trend in the miniaturization of electronic devices.

2012年2月2日 · Atomic layer deposition (ALD) is a variant of chemical vapor deposition (CVD) techniques capable of angstrom-resolution, layer-by-layer growth of compound films. 1–4 ALD can deposit these ultra-thin films in a conformal manner over a wide range of materials and high-aspect-ratio topography.