2004年7月4日 · O-based HfO2 ALD at 250°C susceptor temperature. The pulse time was fix d at 400 ms for both O3 and H2O. Low deposition rate at 200 ms showed that the surface was not saturated. A slow increase of the deposition rate after the 500 ms pulse tim showed that TEMAH was a good ALD reactant, though the saturation curve was n

TEMAH is used as a precursor for atomic layer deposition (ALD)of hafnium oxide (HfO 2) thin films. Because HfO 2 has a high dielectric constant of 16-25, it is commonly used as a dielectric film in semiconductor fabrication. TEMAH is ideal for ALD because of its low boiling point and its reactivity with water and ozone.

Abstract: Hafnium oxide (HfO 2 ) thin films were deposited from tetrakis (ethylmethylamino)hafnium (TEMAH) and ozone (O 3 ) by atomic layer deposition (ALD) on 200 mm silicon wafers. The O 3 half-reaction shows good saturation behavior. However, gradual surface saturation is observed for the TEMAH half-reaction.

2023年3月1日 · The reaction mechanisms of the thermal HfO 2 –ALD process on a hydroxylated Si (1 0 0) surface using water and TEMAH can be summarized as follows. During the …

2003年10月1日 · Hafnium oxide (HfO 2) thin films were synthesized from tetrakis (dimethylamino) hafnium (TDMAH) and ozone (O 3) by atomic layer deposition (ALD) on 200 mm silicon wafers. Gradual saturation was observed for TDMAH exposure pulse. However O 3 showed better saturation behavior for O 3 exposure.

TEMAH 被用作氧化铪（HfO 2）薄膜的原子层沉积（ALD）的前体。 因为 HfO 2 具有 16-25 的高介电常数，所以它通常用作半导体制造中的介电膜。 TEMAH 由于其低沸点以及与水和臭氧的反应性，是 ALD 的理想选择。

2016年6月15日 · Atomic layer deposition (ALD) is the conventional process to obtain smooth, conformal and pinhole-free HfO2 films with excellent dielectric properties. The interactions of ALD precursors (hafnium-based organic molecules) with HO–H are critical because through these groups some of the most important chemical reactions, including the formation ...

2005年1月31日 · Hafnium oxide thin films were deposited from tetrakis (ethylmethylamino)hafnium (TEMAH) and ozone by atomic layer deposition (ALD) on 200 mm silicon wafers. The half-reaction shows good saturation behavior. However, gradual surface saturation is observed for the TEMAH half-reaction.

Hafnium oxide (HfO 2 ) thin films were deposited from tetrakis (ethylmethylamino)hafnium (TEMAH) and ozone (O 3 ) by atomic layer deposition (ALD) on 200 mm silicon wafers. The O 3 half-reaction shows good saturation behavior. However, gradual surface saturation is observed for the TEMAH half-reaction.

TEMAH is well-suited for ALD because its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide (ITO), Si (100), and two-dimensional materials like MoS 2. [2] [3] TEMAH also conveniently reacts with either water or ozone as the oxygen-source in …