2023年5月31日 · The surface morphology and the phases of the AlN films grown on sapphire wafers with diverse surface orientations were investigated by atomic force microscope (AFM) and X-ray diffraction (XRD). The surface chemical states of the deposited AlN thin films were determined by X-ray photoelectron spectroscopy (XPS).

2022年6月29日 · Conventional AlN (1000 °C) demonstrates contrasting AFM images between slightly Al-rich and N-rich growth conditions, as shown in figures 7(a) and (b). Although the AFM image shows good step-flow growth, many hexagonal hillocks are also observed in figure 7(a).

2023年12月1日 · Sputtered aluminum nitride (AlN) thin films were characterized by Piezoresponse Force Microscopy (PFM) technique using a methodology to decrease the contribution of the electrostatic forces to obtain a pure piezoelectric response.

2015年6月2日 · Thanks to a Non Contact Atomic Force Microscope (NC-AFM) connected under ultra high vacuum (UHV) to a dedicated molecular beam epitaxy (MBE) chamber, the surface of AlN (0001) thin films grown on Si (111) and 4H-SiC (0001) substrates has been characterized.

2017年1月3日 · In this study, we make a proposal of a novel technique and concept of ALA in the ALD process to achieve high-quality epitaxial growth of AlN at a low deposition temperature of 300 °C.

2017年2月21日 · Taking into account both AFM and XRD results, it can be found that HT-AlN epilayers grown on 7–100 s nitrided sapphires present better crystallographic quality than ones on aluminized or ...

2014年9月1日 · The paper deals with AFM imaging and characterization of 3D surface morphology of aluminum nitride (AlN) epilayers on sapphire substrates prepared by magnetron sputtering. Due to the effect of temperature changes on epilayer's surface during the fabrication, a surface morphology is studied by combination of atomic force microscopy (AFM) and ...

2019年10月11日 · In this work, the growth of a thick (>100 μm) diamond layer on 250-nm-thick AlN layers has been successfully demonstrated and a possible model of its growth developed. The thermal barrier resistance of the interface was also measured and found to be much improved compared to state-of-the-art GaN-on-diamond material.

2021年5月25日 · We report the growth of crack-free 4 μm thick Aluminum Nitride (AlN) layers in a custom build vertical cold wall metal–organic chemical vapor deposition (MOCVD) reactor using N2 carrier gas on 0.2° offcut sapphire substrate without any …

2022年9月9日 · We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area, cost-effective N-polar AlN templates. Direct growth without any in situ surface cleaning leads to films with inverted Al polarity. It is found that Al-assisted cleaning before growth enables the epitaxial film to maintain N-polarity.