2021年6月1日 · In this paper, we report for the first time, electrical and piezoelectric properties of preferential (100) oriented AlN thin film grown on Mo coated Si substrate. The crystallinity and preferred orientation peaks of AlN film grown on Mo electrodes are …

2021年4月12日 · In this study, the epitaxial growth of AlN thin films on a Mo electrode/sapphire substrate at a low substrate temperature using reactive sputtering was explicitly demonstrated. A Mo thin film with a sufficient thickness of 100 nm was deposited as the bottom electrode on a sapphire substrate.

2008年5月1日 · Highly c -axis oriented aluminum nitride (AlN) thin films have been prepared on molybdenum (Mo) bottom electrodes using AlN interlayers (AlN-IL), by reactive rf magnetron sputtering. The interlayers were deposited between the Mo electrodes and silicon substrates, such as AlN/Mo/AlN-IL/Si.

2022年2月17日 · In this study, a concept of functionally graded materials (FGMs) was used for the metallization of AlN ceramic. Symmetrical Mo/AlN/Mo FGMs with different composition exponent p (p=1, p<1, and p>1) were designed and fabricated by hot-press sintering.

2013年12月5日 · The optimum substrate temperature for depositing (0002)-oriented AlN on Mo films was 400°C. At this substrate temperature, AlN films deposited on RF-sputtered Mo bottom electrodes exhibited better crystalline quality and greater frequency response with only one resonance peak compared with DC-sputtered Mo bottom electrodes.

The high quality c-axis orientation AlN thin films with different thickness are achieved by optimum sputter deposition conditions on Mo and showed quasi-single crystal piezoelectric properties assessed using XRD, SEM, AFM and electrical characterizations are reported.

In this study, we examined the combined effects of substrate temperature and methods for preparing the underlying Mo electrodes on the crystalline character, morphology, and elec-trical properties of the AlN film. The substrate temperature ranged from 20 C to 600 C. Mo films were deposited via DC or RF sputtering.

2023年10月27日 · 研究结果表明，Mo插入层的厚度是影响Sc0.2Al0.8N缓冲层和GaN外延层的重要因素，Sc0.2Al0.8N缓冲层对Mo上GaN晶体质量的提高具有重要意义。 随Mo厚度的增加，Sc0.2Al0.8N缓冲层的表面粗糙度先减小后增大，GaN外延层的（002）面X射线衍射摇摆曲线半峰全宽先减小后增大。 当Mo插入层厚度为400 nm时，GaN外延层的晶体质量最好，GaN（002）面的X射线衍射摇摆曲线半峰全宽为0.51°，由拉曼光谱计算得到的压应 …

通过反应性射频磁控溅射，使用 AlN 夹层 (AlN-IL) 在钼 (Mo) 底部电极上制备了高度 c 轴取向的氮化铝 (AlN) 薄膜。 中间层沉积在 Mo 电极和硅衬底之间，例如 AlN/Mo/AlN-IL/Si。

2020年3月5日 · In this paper, aluminum nitride (AlN) and molybdenum (Mo) were used for fabrication of AlN/Mo functionally graded materials by spark plasma sintering (SPS). In order to study the influence of microstructure on mechanical properties in AlN/Mo FGMs, the FGMs with different composition exponent p value were analyzed by indentation and bending test.