2015年2月16日 · Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep ultraviolet (DUV) applications, the performance of conventional Al (Ga)N planar devices drastically decays...

2020年8月18日 · The below bandgap optical transitions of an aluminum nitride (AlN) crystal grown on a tungsten (W) substrate by physical vapor transport (PVT) are investigated by below-bandgap-excited photoluminescence (PL) spectroscopy and first-principles calculations.

2021年7月1日 · Herein, the origination and evolution of point defects in high-temperature annealed AlN are studied by photoluminescence (PL) spectroscopy, secondary ion mass spectrometry (SIMS), positron annihilation and first-principles calculation. The NUV peak origination and evolution mechanism have been discussed and clarified.

2022年6月25日 · Compared with other group III nitride compounds, aluminum nitride (AlN) provides important physical properties for applications in optoelectronic devices. Some of these properties are the wide band gap, high thermal conductivity, high volume resistivity, low dielectric constant, strong breakdown field, and good chemical stability.

2010年10月1日 · Ultrathin AlN layers are deposited by plasma-enhanced atomic-layer-deposition at 200 ° C on top of near-surface InGaAs/GaAs quantum well structures. A significant passivation effect is seen as shown by up to 30 times higher photoluminescence intensity and up to seven times longer lifetime compared to uncoated reference samples.

2023年4月3日 · The photoluminescence (PL) of GaN and AlN/GaN nanowires (NWs) grown under by the plasma-assisted molecular beam epitaxy (PA-MBE) is presented. The structural morphology of the AlN/GaN and GaN NWs was examined using Reflection high-energy electron diffraction (REEHD), high-resolution scanning electron microscope (SEM), …

2020年8月28日 · Aluminum nitride (AlN) is well known as an inorganic semiconductor with an ultrawide bandgap of about 6.2 eV, and its properties of phosphorescence, photoluminescence (PL), and...

2024年7月1日 · Pulse laser deposition (PLD) offers alternative methods in depositing AlN on Si. With more laser pulses, the optical bandgap of AlN approaches bulk AlN (∼6.2 eV), corroborating near band edge emission in PL. The grain size of deposited AlN increases with laser pulses, due to aggregation during condensation on Si substrate.

2024年11月8日 · 卓立汉光合作研制的深紫外共焦光致发光（PL）谱仪 迎来新的里程碑——在客户处安装调试过程中，在低温下测试到了氮化铝（AlN）的带边发光。突破了长期以来对于AlN的带边峰，到底是样品不好发不出光来还是设备不好测不出来的罗生门。

氮化铝（AlN）是一种与氮化镓晶体结构相似的半导体材料，但是拥有更高的热导率、更高的结构稳定性和更 大的禁带宽度（6.2 eV），因此稀土离子掺入氮化铝材料后可以获得有效光发射，在全色显示和白光发射等领