2023年9月1日 · The cultivation of AlN using the PVT method necessitates a resilient system that can endure exceedingly high temperatures and withstand the corrosive impact of Al vapor. Furthermore, the system must possess longevity and economic feasibility for sustainable usage.

This review systematically summarizes the latest research progress in AlN crystals grown by the PVT method in recent years, and introduces their applications in deep UV-LEDs, UV lasers and Schottky barrier diodes (SBDs). Finally, the challenges and …

2017年6月1日 · Physical vapor transport (PVT) is the most successful and widely used approach for bulk aluminum nitride (AlN) single crystals. During the process of PVT growing AlN crystals, crucible materials, the growth setup, and the growth parameters (e.g., temperature distribution, growth pressure) are crucial.

2021年3月10日 · 物理气相传输法（pvt）被公认为生长氮化铝单晶的唯一方法，同质外延生长技术是最终制备高质量、大尺寸氮化铝单晶的最佳方案。 本文浅谈了氮化铝单晶同质外延生长技术的基础原理、最新进展以及面临的挑战。

2020年7月9日 · AlN单晶的制备方法主要包括分子束外延（MBE）、氢化物气相外延（HVPE）、金属有机化合物气相淀积（MOCVD）和物理气相传输（PVT）法等。 其中HVPE、MOCVD和MBE法多用来制备薄膜，HVPE生长速度快（100 μm/h），几乎是MOCVD和MBE法的100倍，适合制作较厚的AlN薄膜。 PVT技术的基本原理为高温区AlN源的分解升华，通过温度梯度驱动至籽晶表面重新凝华成晶体，其生长速度比HVPE更快、晶体质量更高，是目前制备大尺寸、高质 …

2024年8月1日 · The crystallization process of aluminum nitride (AlN) hetero-epitaxial seeding on silicon carbide (SiC) substrates through physical vapor transport (PVT) was thoroughly examined, utilizing techniques such as XRD, UV–Vis, PL, SIMS, Raman, and STR simulation.

2019年4月19日 · Three modified PVT methods with different features including selected growth at a conical zone, freestanding growth on a perforated sheet, and nucleation control with an inverse temperature gradient are discussed and compared in terms of the size and quality of the bulk AlN crystals they can produce as well as the process complexity.

The generation of sub-grains during the preparation of AlN crystals by physical vapor transport (PVT) method can reduce crystal quality, and even lead to the development of polycrystallization. In this paper, the generation and evolution of sub-grains were studied by adjusting the thermodynamic and kinetic growth conditions, and effective ...

2022年1月3日 · 本文介绍 AlN 晶体 PVT 法生长的基本原理与过程，分析晶体生长对坩埚材料的性能要求，重点综述了 TaC 坩埚和 TaC 涂层石墨坩埚的制备技术。

2025年2月18日 · 而物理气相输运（pvt）方法则利用aln高温下的分解特性，使aln粉体或陶瓷原料在高温区升华，在低温区凝华结晶，最终实现aln单晶晶锭制备。 2、在pvt-aln制备过程中，aln单晶制备受诸多因素影响，如坩埚高低温区之间的温度梯度、籽晶表面温度、坩埚径向温场 ...