氧化铝是原子层沉积最常见的薄膜（ALD Al2O3），具有高透明度、高禁带宽度、高介电常数、高阻隔性以及良好的化学和热稳定性，因而作为钝化层、气体渗透阻隔层和栅极介电层等广泛应用于太阳能电池钝化、OLED封装、有机太阳能电池介质层、印刷电子和微电子封装等领域。 相比于 溶胶-凝胶 、 热蒸发 、 磁控溅射 、 化学气相沉积 以及其他薄膜沉积方法，ALD法可以制备结构致密、保形性好、缺陷密度低、性能优异的薄膜，特别适用于在较大深宽比、复杂的3D多孔基材 …

2016年9月1日 · The comprehensive investigation results of the microstructure, mechanical properties and corrosion resistance of the Al2 O 3 thin films deposited on hot work tool steel substrate are presented in the paper. Aluminium oxide layers were prepared using atomic layer deposition (ALD) method in temperature 150, 225 and 300 °C.

2004年1月30日 · Al 2 O 3 films were deposited by atomic layer deposition (ALD) at temperatures as low as 33 °C in a viscous-flow reactor using alternating exposures of Al (CH 3) 3 (trimethylaluminum [TMA]) and H 2 O. Low-temperature Al 2 O 3 ALD films have the potential to coat thermally fragile substrates such as organic, polymeric, or biological materials.

2022年3月24日 · Thin films grown via atomic layer deposition (ALD) suffer from insufficient growth rate and unreliability for temperature-sensitive electronic substrates. This study aimed to examine the growth...

2021年4月30日 · In this work hydrogen and oxygen migration and exchange reactions in the atomic layer deposited (ALD) Al 2 O 3 thin films were studied together with hydrogen incorporation by varying deposition parameters. Al 2 O 3 films deposited at low temperatures can contain more than 20 at.% of hydrogen.

2020年11月1日 · Atomic Layer Deposition (ALD) is an advantageous technique to obtain alumina (Al2 O 3) optical waveguides based on the trimethylaluminum-water (TMA-H2 O) process. However, the influence of ozone (O 3) as oxygen source on pure Al 2 O 3 ALD waveguides has not been studied yet.

Al2O3 films were deposited by atomic layer deposition (ALD) at temperatures as low as 33 °C in a viscous-flow reactor using alternating exposures of Al(CH3)3 (trimethylaluminum [TMA]) and H2O. Low-temperature Al2O3 ALD films have the potential to coat thermally fragile substrates such as organic, polymeric, or biological materials.

2007年5月21日 · The deposition of by remote plasma atomic layer deposition (ALD) in the Oxford Instruments FlexAL reactor was studied and compared with results from thermal ALD in the same reactor.

通过 旋转空间原子层沉积（RS-ALD）技术 制备了高质量的Al2O3薄膜，并将其应用于TOPCon太阳能电池的 边缘钝化。 经过退火处理后， 电池效率 进一步 提高了0.021%至0.119%， 组件功率提高了0.68 W至3.76 W，这些结果充分证明 了边缘钝化 在 提高太阳能电池性能 方面的 ...

2024年8月15日 · 目的 针对目前微通道板 (MCP)导电层电阻可调范围窄、性能稳定性差等问题,提出一种新的MCP导电层的制备方法.方法 应用原子层沉积 (ALD)工艺在硅片上沉积不同厚度的Al2O3和Ru薄膜,以获得较优的纳米薄膜制备工艺参数,应用扫描电子显微镜 (SEM)得到薄膜的截面厚度及成膜质量,应用能量色散X射线光谱 (EDS ...