Al2O3 is Corundum structured and crystallizes in the trigonal R-3c space group. The structure is three-dimensional. Al3+ is bonded to six equivalent O2- atoms to form a mixture of corner, edge, and face-sharing AlO6 octahedra. The corner-sharing octahedra tilt angles range from 48–60°.

2024年5月31日 · In this article, we investigate the role of Al 2 O 3 in PSCs, particularly in terms of short- and long-term performance and as a moisture barrier. We deposited a thin Al 2 O 3 interlayer via ALD at three different interfaces and analyzed its effect on a large number of PSCs.

2024年2月1日 · Al 2 O 3 nanoparticles (NPs) are utilized as an inorganic surface modifier to enhance the wettability and reduce the roughness of PTAA simultaneously, which proves to be essential in fabricating UF-PSCs as it enables the deposition of uniform and dense metal halide perovskite (MHP) films with full coverage and fewer defects.

2020年7月22日 · We demonstrate that ultrathin room temperature atomic layer-deposited Al 2 O 3 on the perovskite surface very effectively hinders the migration. The perovskite-Al 2 O 3 interface enables charge transfer across the Al 2 O 3 layer in the solar cells, without causing any drastic changes in the properties of the perovskite absorber.

2024年11月12日 · Therefore, in this paper, RS-ALD is used to prepare Al 2 O 3 thin films and applied to TOPCon half solar cell edge passivation. RS-ALD has three significant advantages over conventional ALD.

Explore the - crystalline lattice structure of Al2O3 with lattice parameters, 3d interactive image of unit cell, cif file, lattice constants & more.

2018年8月21日 · Electrical characterisation of perovskite solar cells consisting of room-temperature atomic-layer-deposited aluminium oxide (RT-ALD-Al 2 O 3) film on top of a methyl ammonium lead triiodide (CH 3 NH 3 PbI 3) absorber showed excellent stability of the power conversion efficiency (PCE) over a long time.

2025年1月1日 · Al 2 O 3 film process experiments were conducted utilizing atomic layer deposition (ALD) technology to optimize the process conditions for rotating-space type ALD Al 2 O 3 thin films, which were then applied to edge passivation of tunneling oxide (TOPCon) solar cells.

2018年6月14日 · Review on the prospects for the use of Al2O3 for high-efficiency solar cells. Al 2 O 3 is a material that has rapidly gained in popularity in the past years as thin film passivation material for c-Si photovoltaics (PV). In this contribution ten questions will be addressed as might exist in the solar cell community.

2022年10月11日 · The formation of Al2O3 NPs and MAl2O4 (M=Co, Cu, Ni, Zn) nanocomposite was confirmed by using several characteristics such as XRD, UV–Vis, FTIR, FE-SEM, and EDX spectra.