2006年7月13日 · We examine the effect of growth temperature in the 150−300 °C range on the structural and morphological properties of Al 2 O 3 films deposited using atomic layer deposition, contrasting the effect of H 2 O and O 3 as oxygen sources. Trimethylaluminum (TMA) is …

氧化铝是原子层沉积最常见的薄膜（ALD Al2O3），具有高透明度、高禁带宽度、高介电常数、高阻隔性以及良好的化学和热稳定性，因而作为钝化层、气体渗透阻隔层和栅极介电层等广泛应用于太阳能电池钝化、OLED封装、有机太阳能电池介质层、印刷电子和微电子封装等领域。 相比于 溶胶-凝胶 、 热蒸发 、 磁控溅射 、 化学气相沉积 以及其他薄膜沉积方法，ALD法可以制备结构致密、保形性好、缺陷密度低、性能优异的薄膜，特别适用于在较大深宽比、复杂的3D多孔基材 …

2021年4月30日 · In order to track the hydrogen and oxygen movement in the films, heavy water (2 H 2 16 O) and oxygen-18 enriched water (1 H 2 18 O) were used as precursors in combination with trimethylaluminium (TMA). Different isotopes of the same element were quantified by means of time-of-flight elastic recoil detection analysis (ToF-ERDA).

2011年1月1日 · In this study, we use plasma enhanced atomic layer deposition to deposit Al 2 O 3 thin films, where trimethylaluminum (TMA) and O 2 are utilized as precursor and oxidant, respectively. Besides, the novel plasma source for the atomic layer deposition technology is confined by magnetic field and the discharge is at radio frequency (RF) plasma.

Atomic layer deposition (ALD) of Al2O3 using trimethylaluminum (TMA) and H2O is the most widely and deeply studied ALD process owing to the superior properties of the deposited Al2O3 thin films and...

2004年1月30日 · Al 2 O 3 films were deposited by atomic layer deposition (ALD) at temperatures as low as 33 °C in a viscous-flow reactor using alternating exposures of Al (CH 3) 3 (trimethylaluminum [TMA]) and H 2 O. Low-temperature Al 2 O 3 ALD films have the potential to coat thermally fragile substrates such as organic, polymeric, or biological materials.

Layer Deposition (ALD) is a promising and unexplored alternative to thermal oxidation. Depicted schematically in Fig. 1, ALD is a chemical vapor growth method that uses...

2024年5月7日 · This study investigates the impact of vapour-phase precursor flow rates—specifically those of trimethylaluminum (TMA) and deionized water (H2O)—on the deposition of aluminum oxide (Al2O3) thin films through atomic layer deposition (ALD).

2006年7月13日 · 三甲基铝（tma）是金属来源。 使用从头算来研究O 3反应的机理，并为观察到的温度依赖性提供了解释。 模拟结果表明，吸附的甲基被O 3氧化，在表面产生了羟基。

2011年4月7日 · Abstract: Alumina (Al 2 O 3) thin films have been deposited on silicon substrates by atomic layer deposition at 200°C using TMA as Al precursor and H 2 O or O 3 as oxygen precursor. The growth rate has been found to be lower …