The XPS Spectra section provides raw and processed survey spectra, chemical state spectra, BE values, FWHM values, and overlays of key spectra. Atom% values from surveys are based on sample, as received, and Scofield cross-sections. Atom% values are corrected for IMFP and PE. Peak-fits are guides for practical, real-world applications.

Description: As2O (99.995%) from Aldrich Lot# 04445CW, analyzed at 90 deg TOA, mesh at 1mm, non-conductive 3 white powder pressed into 3 mm pellet, mp 312 C, d 3.7, sol in boiling …

2021年9月15日 · The valence state of As adsorbed by CaO at 300–900 °C was distinguished by XPS (AXIS-ULTRA dld-600w, Kratos, Japan). Moreover, the microstructures and element distribution of sorbents were analyzed by using a scanning electron microscopy-energy dispersive spectrometer (SEM, Sigma 300, ZEISS, Germany; EDS, X-Max 80, Oxford, Britain).

Experimental Information As2O3 sublimes in vacuum. As5+ may degrade under X-rays, forming As3+ as a by-product. Minimize acquisition time where possible or collect data from several different locations on the sample (with very short acquisition times) and integrate the data. Interpretation of XPS spectra

As2O3 was loaded via vapor deposition (As (vap)) and the wet impregnation (As (imp)) method, respectively. Results demonstrated that the poisoning extent of vapor arsenic was...

A sustainable approach for reducing As2O3 to As (0) using a mechanochemical method in a medium of acetic acid.

A (3 × 1) crystalline oxide layer on InAs is generated in a temperature range of 290–330 °C with a coexistence of In2O and As2O3. The stability of the crystalline oxide upon the atomic layer ...

2004年4月9日 · 用X射线光电子能谱 (XPS),测量了Ga3d和As3d光电子峰的结合能值,指认了砷化镓 (GaAs)晶片表面的氧化物组成,计算了表面氧化层的厚度,定量分析了表面的化学组成;比较了几种不同的砷化镓晶片表面的差异.结果表明:砷化镓表面的自然氧化层主要由Ga2O3、As2O5、As2O3和 ...

2004年1月8日 · 用X射线光电子能谱分析技术 (XPS)研究了几种砷化镓抛光片及经不同表面处理方法处理的砷化镓晶片表面的化学计量比和表面化学组成.结果表明砷化镓抛光片的表面自然氧化层中含有Ga2O3、As2O5、As2O3及元素As;表面化学计量比明显富镓,而经过适当的化学处理后这些 ...

2000年11月1日 · The XPS analysis clearly demonstrates that the as-received GaAs specimens were covered with a surface oxide comprised of Ga 2 O 3, As 2 O 3 and As 2 O 5. Polarization in acid solutions dissolved the surface oxide.